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FQT5N20 30025 NTE4971 12C1052 158X393S 0105K1 00111 102M10V
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  0.0052 Datasheet PDF File

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    SANKEN[Sanken electric]
Part No. 2SD2082
OCR Text ...ternal Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 A 23.00.3 V 9.50.2 mA a b MHz pF 1.75 2.15 1.05 5.450.1 1.5 4.4 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emit...
Description Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid/ Motor and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid Motor and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Motor and General Purpose)

File Size 25.49K  /  1 Page

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    Sanken
Part No. 2SD2082
OCR Text ...ternal Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 A 23.00.3 V 9.50.2 mA a b MHz pF 1.75 2.15 1.05 5.450.1 1.5 4.4 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emit...
Description Silicon NPN Transistor

File Size 32.33K  /  2 Page

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    2SD2162

NEC
Part No. 2SD2162
OCR Text ... connection hFE 2,000 (VCE = 2.0 V, IC = 3.0 A) * Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25C) Parameter Collector to base voltage Collector to emitter voltage E...
Description Silicon power transistor

File Size 116.62K  /  7 Page

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    2SD2162 2SD2162-AZ

NEC
Part No. 2SD2162 2SD2162-AZ
OCR Text ... connection hFE 2,000 (VCE = 2.0 V, IC = 3.0 A) * Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25C) Parameter Collector to base voltage Collector to emitter voltage E...
Description 8 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

File Size 109.13K  /  6 Page

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    2SD2165

NEC[NEC]
Part No. 2SD2165
OCR Text ... PACKAGE DRAWING (UNIT: mm) 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 15.0 0.3 3 0.1 4 0.2 mounting cost reduction. FEATURES * High hFE and low VCE(sat): hFE 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A) VCE(SAT) 0.3 V TYP. (IC = 3.0 A...
Description 6 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor

File Size 113.92K  /  5 Page

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    2SD2351 2SD2226K 2SD2707 2SD2654 2SD2227S

ROHM[Rohm]
Part No. 2SD2351 2SD2226K 2SD2707 2SD2654 2SD2227S
OCR Text 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) External dimensions (Unit : mm) 2SD2...
Description General Purpose Transistor (50V 0.15A)
General Purpose Transistor (50V, 0.15A)
(2SD2xxx) General Purpose Transistor (50V/ 0.15A)

File Size 75.60K  /  4 Page

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    2SD2351

ROHM
Part No. 2SD2351
OCR Text 0.15A) 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S !Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) !External dimensions (Units : mm) 2SD2654 (1) (...
Description Transistors > Small Signal Bipolar Transistors(up to 0.6W)

File Size 63.13K  /  2 Page

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    2SK1934

HITACHI[Hitachi Semiconductor]
Part No. 2SK1934
OCR Text ...R)GSS I GSS Min 1000 30 -- -- 2.0 -- 4 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.2 6 2690 920 375 35 135 300 205 0.9 1600 Max -- -- 10 250 3.0 1.6 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V s I F = 8 A, VGS...
Description Silicon N-Channel MOS FET

File Size 48.59K  /  10 Page

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    Renesas
Part No. 2SK1934
OCR Text ...R)GSS I GSS Min 1000 30 -- -- 2.0 -- 4 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.2 6 2690 920 375 35 135 300 205 0.9 1600 Max -- -- 10 250 3.0 1.6 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V s I F = 8 A, VGS = 0 I F = 8 A, ...
Description Transistors>Switching/MOSFETs

File Size 78.99K  /  13 Page

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    hitachi
Part No. 2SK1934
OCR Text ...st conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 800 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V * ID = 4 A VDS = 20 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 -----------------...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 192.44K  /  7 Page

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