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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP5N60A
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| OCR Text |
...tion VGS=0V,ID=250A ID=250A VGS=30V VGS=-30V VDS=600V VDS=480V,TC=125 VGS=10V,ID=2.25A VDS=50V,ID=2.25A
See Fig 7
VDS=5V,ID=250A
...0
VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
SSP5N60A
Fig 2. Transfer Cha... |
| Description |
Advanced Power MOSFET
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| File Size |
227.30K /
7 Page |
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it Online |
Download Datasheet
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STANSON[Stanson Technology]
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| Part No. |
ST2304
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| OCR Text |
...GURATION SOT-23-3L 3
FEATURE 30V/2.5A, RDS(ON) = 70m-ohm @VGS = 10V 30V/2.0A, RDS(ON) = 105m-ohm @VGS = 4.5V Super high density cell desi...0 10 1.25 1.25 0.8 150 -55/150 100
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley S... |
| Description |
N Channel Enchancement Mode MOSFET
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| File Size |
76.26K /
6 Page |
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it Online |
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SEME-LAB[Seme LAB]
Semelab(Magnatec)
TT electronics Semelab Limited
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| Part No. |
BDS12IG BDS10IG BDS11IG
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| OCR Text |
... 60V VCB = 80V VCB = 100V VCE = 30V VCE = 40V VCE = 50V
Min.
Typ.
Max.
500 500 500 1 1 1 1
Unit
mA
ICEO
mA
IEBO
mA...0) BDS12 Collector - Emitter IC = 5A saturation voltage IC = 10A Base - Emitter IC = 10A saturation ... |
| Description |
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN澶?欢????朵?绠?TO257???灏??))
SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN外延型硅晶体TO257金属封装)) 硅npn型Epitiaxial基地晶体TO257金属包（npn型外延型硅晶体管TO257金属封装））
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| File Size |
14.52K /
2 Page |
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it Online |
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STANSON[Stanson Technology]
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| Part No. |
ST2306
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| OCR Text |
...SOT-23-3L / SOT-23 3
FEATURE 30V/3.5A, RDS(ON) = 70m-ohm @VGS = 10V 30V/2.8A, RDS(ON) = 95m-ohm @VGS = 5V Super high density cell design ...0.8 150 -55/150 100
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley Square, Mountain... |
| Description |
N Channel Enhancement Mode MOSFET
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| File Size |
146.51K /
8 Page |
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it Online |
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STANSON[Stanson Technology]
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| Part No. |
ST3403
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| OCR Text |
...URATION SOT-23-3L 3
FEATURE -30V/-2.8A, RDS(ON) = 105m-ohm @VGS = -10V -30V/-2.5A, RDS(ON) = 115m-ohm @VGS = -4.5V -30V/-1.5A, RDS(ON) = ...0.81 150 -55/150 105
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley Square, Mountai... |
| Description |
P Channel Enchancement Mode MOSFET
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| File Size |
144.82K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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