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  -2.9a Datasheet PDF File

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    AP4800AGM-HF AP4800AGM-HF14

Advanced Power Electronics Corp.
Part No. AP4800AGM-HF AP4800AGM-HF14
OCR Text ... 0.02 storage temperature range 2.5 -55 to 150 thermal data parameter total power dissipation operating junction temperature range linear de...9a - 13 18 m ? v gs =4.5v, i d =7a - 21 28 m ? v gs =4v, i d =4a - - 40 m ? v gs(th) gate threshold ...
Description Simple Drive Requirement, Low On-resistance

File Size 90.48K  /  4 Page

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    IRFS630A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFS630A
OCR Text ...) = 0.4 ID = 6.5 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD...9A, RG=12 See Fig 13 VDS=160V,VGS=10V, ID=9A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode ...
Description Advanced Power MOSFET

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    AO4821 AO482110

Alpha & Omega Semiconductors
Part No. AO4821 AO482110
OCR Text ... 19m w r ds(on) (at v gs =-2.5v) < 24m w r ds(on) (at v gs =-1.8v) < 30m w 100% uis tested 100% rg tested symbol v ds v gs i dm t...9a reverse transfer capacitance i f =-9a, di/dt=500a/ m s v gs =0v, v ds =-6v, f=1mhz switching para...
Description 12V Dual P-Channel MOSFET

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4821
OCR Text ... 19m w r ds(on) (at v gs =-2.5v) < 24m w r ds(on) (at v gs =-1.8v) < 30m w symbol v ds v gs i dm t j , t stg symbol t 10s stea...9a reverse transfer capacitance i f =-9a, di/dt=500a/ m s v gs =0v, v ds =-6v, f=1mhz switching para...
Description 12V Dual P-Channel MOSFET

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    KI7540DP

Guangdong Kexin Industrial Co.,Ltd
Part No. KI7540DP
OCR Text ...current (diode conduction)* i s 2.9 1.1 -2.9 -1.1 a maximum power dissipation* t a =25 3.5 1.4 3.5 1.4 w t a =70 2.2 0.9 2.2 0.9 w operating...9a p-ch 0.026 0.032 v gs =2.5v,i d = 9.8a n-ch 0.020 0.025 v gs =-2.5v,i d = -6.9a p-ch 0.043 0.053 ...
Description N- and P-Channel 12-V (D-S) MOSFET

File Size 53.94K  /  2 Page

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    SCA610-C23H1A

VTI technologies
Part No. SCA610-C23H1A
OCR Text ... consumption vdd = 5 v; no load 2.0 4.0 ma operating temperature - 40 + 125 c resistive output load vout to vdd or vss 20 kohm capacitive...9a, c 20 (9a 20 (9a 20 (9a 20 (9a 60 (9a mg cross-axis sensitivity (10 5544444% frequency res...
Description Accelerometer/Inclinometer

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    Alpha
Part No. AO4600L
OCR Text ...d drain current b w 6.9 5.8 40 2 1.44 -4.2 -5 2 1.44 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel 30 -...9a (v gs = 10v) -5a (v gs = -10v) r ds(on) < 27m ? < 49m ? (v gs =- 10v) < 32...
Description Complementary Enhancement Mode Field Effect Transistor 增强模式互补场效应晶体管

File Size 264.37K  /  7 Page

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    MIC4421 MIC4421BM MIC4421BN MIC4421CM MIC4421CN MIC4421CT MIC4422BM MIC4422BN MIC4422CM MIC4422CN MIC4422CT

MICREL INC
MICREL[Micrel Semiconductor]
Micrel Semiconductor, Inc.
Part No. MIC4421 MIC4421BM MIC4421BN MIC4421CM MIC4421CN MIC4421CT MIC4422BM MIC4422BN MIC4422CM MIC4422CN MIC4422CT
OCR Text ...22 accepts any logic input from 2.4V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input t...9A Peak * Wide Operating Range .............................. 4.5V to 18V * High Capacitive Load Dri...
Description 9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process 9 A BUF OR INV BASED MOSFET DRIVER, PDSO8
FPGA - 100000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8
FPGA - 100000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 9 A BUF OR INV BASED MOSFET DRIVER, PSFM5
9A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8

File Size 109.03K  /  10 Page

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    NNCD5.1A NNCD5.6A NNCD6.2A NNCD6.8A NNCD4.3A NNCD4.7A NNCD7.5A NNCD3.3A NNCD3.6A NNCD9.1A NNCD8.2A NNCD10A NNCD11A NNCD1

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NNCD5.1A NNCD5.6A NNCD6.2A NNCD6.8A NNCD4.3A NNCD4.7A NNCD7.5A NNCD3.3A NNCD3.6A NNCD9.1A NNCD8.2A NNCD10A NNCD11A NNCD12A NNCD3.9A NNCD7.5A-AZ NNCD9.1A-AZ
OCR Text ...tection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV. Type NNC...9A NNCD4.3A NNCD4.7A NNCD5.1A NNCD5.6A NNCD6.2A NNCD6.8A NNCD7.5A NNCD8.2A NNCD9.1A NNCD10A NNCD11A ...
Description 100 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-34
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE 静电放电噪声裁剪二极00毫瓦

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