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For unilateral Found Datasheets File :: 420 Search Time::1.782ms
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				Philips Semiconductors
Part No.	BFG25A/X
OCR Text	...=25 c 3.5 5 - ghz g um maximum unilateral power gain i c = 0.5 ma; v ce =1v; f = 1 ghz; t amb =25 c - 18 - db f noise ?gure i c = 0.5 ma; v ce =1v; f = 1 ghz; g = g opt ; t amb =25 c - 1.8 - db i c = 1 ma; v ce = 1 v; f = 1 ghz; g = g op...
Description	NPN 5 GHz wideband transistor
File Size	122.55K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors Quanzhou Jinmei Electro...
Part No.	BFT25A04 BFT25A-15
OCR Text	...00 mhz 3.5 5 - ghz g um maximum unilateral power gain i c = 0.5 ma; v ce = 1 v; t amb = 25 c; f = 1 ghz -15-db f noise ?gure g = g opt ; i c = 0.5 ma; v ce = 1 v; t amb =25 c; f = 1 ghz - 1.8 - db g = g opt ; i c = 1 ma; v ce = 1 v; t ...
Description	NPN 5 GHz wideband transistor
File Size	86.81K / 14 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BFG25A
OCR Text	...=25 c 3.5 5 - ghz g um maximum unilateral power gain i c = 0.5 ma; v ce =1v; f = 1 ghz; t amb =25 c - 18 - db f noise ?gure i c = 0.5 ma; v ce =1v; f = 1 ghz; g = g opt ; t amb =25 c - 1.8 - db i c = 1 ma; v ce = 1 v; f = 1 ghz; g = g op...
Description	NPN 5GHz wideband transistor(NPN 5G赫兹宽带晶体
File Size	121.62K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFG590_X BFG590 BFG590/X
OCR Text	...ce transition frequency maximum unilateral power gain insertion power gain Ts 60 C IC = 35 mA; VCE = 8 V IC = 0; VCE = 8 V; f = 1 MHz IC = 80 mA; VCE = 4 V; f = 1 GHz IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 C IC = 80 mA; VCE = 4 V; f...
Description	NPN 5 GHz wideband transistors
File Size	105.40K / 12 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG590W_X BFG590W BFG590W/X
OCR Text	...ce transition frequency maximum unilateral power gain insertion power gain Ts 85 C IC = 70 mA; VCE = 8 V IC = 0; VCB = 8 V; f = 1 MHz IC = 80 mA; VCE = 4 V; f = 1 GHz; Tamb = 25 C open emitter collector-emitter voltage open base CONDITIONS...
Description	NPN 5 GHz wideband transistors
File Size	110.63K / 12 Page	View it Online	Download Datasheet

				Philips
Part No.	PBR941B
OCR Text	...ce transition frequency maximum unilateral power gain noise figure total power dissipation thermal resistance from junction to soldering point CONDITIONS IC = 0; VCB = 6 V; f = 1 MHz IC = 15 mA; VCE = 6 V; fm = 1 GHz IC = 15 mA; VCE = 6 V; ...
Description	UHF wideband transistor
File Size	147.55K / 13 Page	View it Online	Download Datasheet

				Philips
Part No.	PBR941
OCR Text	...ce transition frequency maximum unilateral power gain noise figure total power dissipation thermal resistance from junction to soldering point CONDITIONS IC = 0; VCB = 6 V; f = 1 MHz IC = 15 mA; VCE = 6 V; fm = 1 GHz IC = 15 mA; VCE = 6 V; ...
Description	UHF wideband transistor
File Size	110.54K / 16 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG540W_XR BFG540 BFG540_X BFG540_XR BFG540W BFG540W_X BFG540_X_XR_4 BFG540/X BFG540/XR BFG540W/XR
OCR Text	...ce transition frequency maximum unilateral power gain Ts 60 C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 C IC = 0; VCE = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C IC = 40 mA; V...
Description	NPN 9GHz wideband transistor From old datasheet system NPN 9 GHz wideband transistor
File Size	127.74K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFG16A BFG16
OCR Text	...in transition frequency maximum unilateral power gain up to Ts = 110 C; note 1 IC = 150 mA; VCE = 5 V; Tj = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C open base CONDITIONS open e...
Description	NPN 2 GHz wideband transistor
File Size	71.36K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PRF947
OCR Text	...ce transition frequency maximum unilateral power gain noise figure total power dissipation thermal resistance from junction to soldering point CONDITIONS IC = 0; VCB = 6 V; f = 1 MHz IC = 15 mA; VCE = 6 V; fm = 1 GHz IC = 15 mA; VCE = 6 V; ...
Description	UHF wideband transistor
File Size	111.59K / 16 Page	View it Online	Download Datasheet

For unilateral Found Datasheets File :: 420 Search Time::1.782ms
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