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INCON INC
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| Part No. |
FKAP-30-S-000-PG
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| OCR Text |
u d s o n , n e w h a m p s h i r e 0 3 0 5 1 p h o n e 6 0 3 - 5 9 5 - 0 5 5 0 f a x 6 0 3 - 5 9 5 - 0 5 5 5 e m a i l : t e c h s u p p o r t @ i n c o n c o n n e c t o r . c o m w e b a d d r e s s : ... |
| Description |
30 CONTACT(S), MALE, TWO PART BOARD CONNECTOR, CRIMP, PLUG
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| File Size |
102.51K /
1 Page |
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IRF[International Rectifier]
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| Part No. |
IRGBC20MD2-S
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| OCR Text |
...ta Sheet
IRGBC20MD2-S
10
D u ty c y c le : 5 0 % T J = 1 2 5 C T s in k = 9 0 C G a t e d r iv e a s sp e c if ie d T u rn -o n lo s s e s in c lu d e e ff e c ts o f re v e rse re c o v e ry P o w e r D is s ip a tio n = 1 3 W
A
... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A)
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| File Size |
376.29K /
8 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WTF8A60-S
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| OCR Text |
... p ti o n t h is dev i c e is f u lly i s o l a t e d pa c kag e s u i tab le f o r a c s w i tc h i n g app li c at i o n , pha s e c ontro l app li ca t i o n s uc h a s f a n s pee d an d t e m pera t ur e m odu l a t i o n c on t ro l, ... |
| Description |
Bi-Directional Triode Thyristor
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| File Size |
332.04K /
5 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30KD-STRL
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| OCR Text |
...ient ( PCB Mounted,steady-state)U Weight
Typ.
--- 0.5 --- 1.44
Max.
1.2 2.5 --- 40 ---
Units
C/W g
www.irf.com
1
4/24/2000
IRG4BC30KD-S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V... |
| Description |
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
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| File Size |
223.21K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR
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| OCR Text |
...12 gfe Forward Transconductance U 5.4 8.1 -- -- ICES Zero Gate Voltage Collector Current -- -- -- -- IGES Gate-to-Emitter Leakage Current --...S VCE = 100V, IC = 16A 250 VGE = 0V, VCE = 600V 2.0 A VGE = 0V, VCE = 10V, TJ = 25C 1100 VGE = 0V, V... |
| Description |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
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| File Size |
159.80K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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