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ON0152 SDK04 6R1000 AN77L07 MC331 M38B79M2 EVALZ 150B1
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    Alpha & Omega Semiconductor
Part No. AOD4N60
OCR Text ...6 nc t d(on) 17 ns t 26 ns a v static drain-source on-resistance v gs =10v, i d =2a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i dss zero gate voltage drain current v ds =600v, v gs =0v gate drain charge ...
Description Single HV MOSFETs (500V - 1000V)

File Size 340.74K  /  6 Page

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    Alpha & Omega Semiconductor
Part No. AOTF5N100
OCR Text ... j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =1000v, v gs =0v a bv dss static drain-source on-resistance v gs =10v, i d =2.5a reverse transfer capacitance v gs =0v, v ds ...
Description Single HV MOSFETs (500V - 1000V)

File Size 348.23K  /  6 Page

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    CY62177DV30 CY62177DV30L-55BAI CY62177DV30L-70BAI CY62177DV30LL-55BAI CY62177DV30LL-55BAXI

Cypress Semiconductor
Part No. CY62177DV30 CY62177DV30L-55BAI CY62177DV30L-70BAI CY62177DV30LL-55BAI CY62177DV30LL-55BAXI
OCR Text static RAM Features * Very high speed: 45 ns * Wide voltage range: 2.20V - 3.60V * Ultra low standby power -- Typical standby current: 1.5 A -- Maximum standby current: 12 A * Ultra low active power * * * * -- Typical active current: 2.2 ...
Description 16-Mbit (2M x 8) static RAM

File Size 870.22K  /  10 Page

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    Nexperia
Part No. 74AUP1G175GW
OCR Text ...this device ensures a very low static and dynamic power consumption across the entire v cc range from 0.8 v to 3.6 v. this device is fully specified for pa rtial power-down ap plications using i off . the i off circuitry disables the out...
Description Low-power D-type flip-flop with reset; positive-edge trigger

File Size 335.67K  /  23 Page

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    Alpha & Omega Semiconductor
Part No. AOL1404
OCR Text ... j =25c unless otherwise noted) static parameters parameter conditions i dss a v ds =v gs i d =250 a v ds =0v, v gs = 12v zero gate voltage drain currentgate-body leakage current forward transconductance diode forward voltage r ds(on) s...
Description Single LV MOSFETs (12V - 30V)

File Size 226.74K  /  6 Page

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    Alpha & Omega Semiconductor
Part No. AOL1404G
OCR Text ... j =25c unless otherwise noted) static parameters parameter conditions v ds =v gs, i d =250 m a drain-source breakdown voltage i d =250a, v gs =0v i dss a zero gate voltage drain current body diode reverse recovery charge body diode revers...
Description Single LV MOSFETs (12V - 30V)

File Size 336.48K  /  6 Page

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    RUM003N02

Rohm
Part No. RUM003N02
OCR Text ... current Gate threshold voltage static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Pulsed Sym...
Description 2.5V Drive Nch MOSFET

File Size 96.82K  /  4 Page

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    UM6K33NTN

ROHM
Part No. UM6K33NTN
OCR Text ...? *pulsed conditions parameter static drain-source on-state resistance r ds (on) ? * ** * * ** * * * ? body diode characteristics (source-drain) (ta = 25 ? c) ? <it is the same ratings for tr1 and tr2.> symbol min. typ. max. unit f...
Description 1.2V Drive Nch Nch MOSFET

File Size 116.78K  /  6 Page

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    Alpha & Omega Semiconductor
Part No. AOSP32320C
OCR Text ... j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage id=250a, vgs=0v r ds(on) static drain-source on-resistance gate source cha...
Description Single LV MOSFETs (12V - 30V)

File Size 295.67K  /  5 Page

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    Alpha & Omega Semiconductor
Part No. AOSP21357
OCR Text ... j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =-250 m a, v gs =0v r ds(on) static drain-source on-resistance gate sou...
Description Single P-Channel MOSFETs (8V - 60V)

File Size 210.39K  /  5 Page

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