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Infineon
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Part No. |
SIGC04T60GS
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OCR Text |
...unction and storage temperature SC data, VGE = 15V, VCC = 360V, Tvj = 150C
1)
Symbol VC E IC Icpuls V GE Tj, Ts t g tp
Value 600
1)
...90A , VGE=VCE VCE=600V , VGE=0V VCE=0V , VGE=20V none 4.1 600 1.5 4.9 2.05 5.7 20 300 A nA V Value ... |
Description |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology; low threshold voltage
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File Size |
73.83K /
4 Page |
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it Online |
Download Datasheet |
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Infineon
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Part No. |
SIGC04T60G
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OCR Text |
...unction and storage temperature SC data, VGE = 15V, VCC = 360V, Tvj = 150C
1)
Symbol VC E IC Icpuls V GE Tj, Ts t g tp
Value 600
1)
...90A , VGE=VCE VCE=600V , VGE=0V VCE=0V , VGE=20V none 600 1.1 tbd 1.5 5.8 1.9 tbd 20 300 A nA V Val... |
Description |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology
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File Size |
73.65K /
4 Page |
View
it Online |
Download Datasheet |
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Infineon
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Part No. |
SIGC04T60
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OCR Text |
...unction and storage temperature SC data, VGE = 15V, VCC = 360V, Tvj = 150C
1)
Symbol VC E IC Icpuls V GE Tj, Ts t g tp
Value 600
1)
...90A , VGE=VCE VCE=600V , VGE=0V VCE=0V , VGE=20V none 600 1.1 tbd 1.5 5.8 1.9 tbd 20 300 A nA V Val... |
Description |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology
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File Size |
73.34K /
4 Page |
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it Online |
Download Datasheet |
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PANASONIC[Panasonic Semiconductor]
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Part No. |
MA784 MA2Z784
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OCR Text |
Schottky Barrier Diodes (SBD)
MA2Z784 (MA784)
Silicon epitaxial planar type
Unit: mm
For super high speed switching For small curren...90A
SMini2-F1 Package
Marking Symbol: 2D
Note) *: The peak-to-peak value in one cycle of 50... |
Description |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD)
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File Size |
61.59K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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