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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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Part No. |
BZD27 BZD27-C10 BZD27-C100 BZD27-C11 BZD27-C110 BZD27-C12 BZD27-C120 BZD27-C13 BZD27-C130 BZD27-C15 BZD27-C150 BZD27-C16 BZD27-C160 BZD27-C18 BZD27-C180 BZD27-C20 BZD27-C200 BZD27-C22 BZD27-C220 BZD27-C24 BZD27-C240 BZD27-C27 BZD27-C270 BZD27-C30 BZD27-C300 BZD27-C33 BZD27-C330 BZD27-C36 BZD27-C360 BZD27-C39 BZD27-C390 BZD27-C3V6 BZD27-C3V9 BZD27-C43 BZD27-C430 BZD27-C47 BZD27-C470 BZD27-C4V3 BZD27-C4V7 BZD27-C51 BZD27-C510 BZD27-C56 BZD27-C5V1 BZD27-C5V6 BZD27-C62 BZD27-C68 BZD27-C6V2 BZD27-C6V8 BZD27-C75 BZD27-C7V5 BZD27-C82 BZD27-C8V2 BZD27-C91 BZD27-C9V1 BZD27_2 BZD27-C5V6/T1 BZD27-C75/T3 BZD27-C15/T3 BZD27-C18/T3 BZD27-C33/T1 BZD27-C200/T1 BZD27-C36/T1 BZD27C12 BZD27-C3V6T/R
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OCR Text |
...Rating System (IEC 134). SYMBOL ptot PARAMETER total power dissipation BZD27-C3V6 to -C6V8 BZD27-C7V5 to -C510 ptot total power dissipation BZD27-C3V6 to -C6V8 BZD27-C7V5 to -C510 PZSM non-repetitive peak reverse power dissipation BZD27-C3V... |
Description |
From old datasheet system DIODE ZENER 5V6 Positive voltage regulators 5.0 AMP POSITIVE VOLTAGE REGULATOR Voltage regulator diodes 5.1 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Voltage regulator diodes 6.8 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Voltage regulator diodes 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE 12 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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File Size |
37.97K /
9 Page |
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it Online |
Download Datasheet |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
BFR183 Q62702-F1316
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OCR Text |
... V
VCEO VCES VCBO VEBO IC IB ptot Tj TA Tstg
1)
TS 60 C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the so... |
Description |
From old datasheet system NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)
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File Size |
56.96K /
7 Page |
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it Online |
Download Datasheet |
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Electronic Theatre Controls, Inc.
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Part No. |
BD140-25 BD136-25 BD138-25
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OCR Text |
... 0.15 A; VCE = 2 V VCBO VCEO IC ptot Tj VCEsat hFE max. max. max. max. max. max. min. max. 136 45 45 136 45 45 138 140 60 100 60 80 1.5 12.5 150 0.5 40 250 138 60 60 5.0 140 100 80 V V A W C V
RATINGS (at T A=25C unless otherwise specifi... |
Description |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-126 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:3mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1.5AI(丙)|126
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File Size |
27.95K /
3 Page |
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it Online |
Download Datasheet |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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Part No. |
BFR183W Q62702-F1493
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OCR Text |
... V
VCEO VCES VCBO VEBO IC IB ptot Tj TA Tstg
1)
TS 56 C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the so... |
Description |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR From old datasheet system
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File Size |
56.46K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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