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TOSHIBA
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Part No. |
TPHR9003NL
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OCR Text |
... nc (typ.) (3) low drain-source on-resistance: r ds(on) = 1.1 m ? (typ.) (v gs = 4.5 v) (4) low leakage current: i dss = 10 a (max) (v...board (a), figure 5.1 note 4: device mounted on a glass-epoxy board (b), figure 5.2 note 5: v dd = ... |
Description |
Power MOSFET (N-ch single VDSS≤30V)
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File Size |
229.59K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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Part No. |
TPCA8059-H
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OCR Text |
... nc (typ.) (4) low drain-source on-resistance: r ds(on) = 3.8 m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v...board (a), figure 5.1 note 3: device mounted on a glass-epoxy board (b), figure 5.2 note 4: v dd = ... |
Description |
Power MOSFET (N-ch single VDSS≤30V)
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File Size |
230.10K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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Part No. |
SSM6J215FE
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OCR Text |
...e voltage. (2) low drain-source on-resistance : r ds(on) = 154 m ? (max) (@v gs = -1.5 v) r ds(on) = 104 m ? (max) (@v gs = -1.8 v) ...board.(25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) note: the mosfets in this device are sensiti... |
Description |
Small-signal MOSFET
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File Size |
228.05K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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