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![MDD142 MDD142-18N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1](Maker_logo/ixys_corporation.GIF)
IXYS[IXYS Corporation] IXYS, Corp.
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Part No. |
MDD142 MDD142-18N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1
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Description |
Thyristor and Rectifiers modules HIgh power Diode modules 165 A, 800 V, SILICON, RECTIFIER DIODE HIgh power Diode modules 165 A, 1800 V, SILICON, RECTIFIER DIODE HIgh power Diode modules 165 A, 1400 V, SILICON, RECTIFIER DIODE
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File Size |
129.90K /
3 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
MGF0911A 0911A
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Description |
From old datasheet system MITSUBISHI SEMICONDUCTOR (gaas FET) L, S BAND power gaas FET
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File Size |
21.84K /
3 Page |
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it Online |
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![IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200-08HJ IRKHF200-08HK IRKHF200-12HJ IRKTF200-04HJ IRKTF200-12HK IRKHF200](Maker_logo/international_rectifier.GIF)
International Rectifier, Corp.
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Part No. |
IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200-08HJ IRKHF200-08HK IRKHF200-12HJ IRKTF200-04HJ IRKTF200-12HK IRKHF200-08HJ
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Description |
200 A, MAGN-A-pak power modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块) 200 A, MAGN-A-pak power modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200 A, MAGN-A-pak power modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块) 200 A, MAGN-A-pak power modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块00安培V的,快速可控硅/二极结构磁共甲柏功率模块 200 A, MAGN-A-pak power modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块00安培2V的,快速可控硅/二极结构磁共甲柏功率模块 200 A, MAGN-A-pak power modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块200安培4V电压,快速可控硅/可控结构磁共甲柏功率模块 200 A, MAGN-A-pak power modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200,磁共振-甲柏功率模块200安培2V的,快速可控硅/可控结构磁共甲柏功率模块 200 A, MAGN-A-pak power modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
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File Size |
154.85K /
8 Page |
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it Online |
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Mitsubishi Electric Corporation
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Part No. |
MGF0905A
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Description |
MITSUBISHI SEMICONDUCTOR (gaas FET) L, S BAND power gaas FET L /S BAND power gaas FET
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File Size |
109.84K /
3 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM100HA-H QM100HY-H
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Description |
MITSUBISHI TRANSISTOR modules HIGH power SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) modules: 250V
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File Size |
84.94K /
5 Page |
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it Online |
Download Datasheet
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Price and Availability
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