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				DYNEX[Dynex Semiconductor]
Part No.	DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text	...nditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 12.0kN with mounting...b = -0.17646 C = 0.000524 D = 0.041024 these values are valid for Tj = 125C for IF 500A to 2500A ...
Description	Rectifier Diode<br>
File Size	94.33K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	...) 75 D uty cycle : 50 % T j = 12 5 C T sink = 90 C G a te d rive a s spe cified P ow er D is s ipation = 170 W S q u a re w a v e : 50 60% of rated v oltage I 25 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) ...
Description	HALF-bRIDGE IGbT INT-A-PAK<br>1200V UltraFast 10-30 kHz Half-bridge IGbT in a INT-A-Pak package<br>
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA75TS120U GA75TS120UPbF
OCR Text	...urrent (A) 100 T = 125 C j 100 Tj = 125 C Tj = 25 C V = 15V 80s PULSE WIDTH GE 1.5 2.0 2.5 10 T = 25 C j 1 10 1.0 0.1 4.0 V = 25V 80s PULSE WIDTH CE 5.0 6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage ...
Description	Ultra-FastTM Speed IGbT<br>1200V UltraFast 10-30 kHz Half-bridge IGbT in a INT-A-Pak package<br>75 A, 1200 V, N-CHANNEL IGbT<br>
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	GTLP36T612 GTLP36T612G GTLP36T612GX
OCR Text	...dicates word. 1 A b C D E F G H j K L M N P R T U V W 2A2 2A4 2A6 2A8 2A10 2A12 2A14 2A16 2A18 2A1 2A3 2A5 2A7 2A9 2A11 2A13 2A15 2A17 2OEAb 2CLKAb 2LEAb VCC GND GND GND VCC 2CEAb VCC GND GND GND VREF 2b2 2b4 2b6 2b8 2b10 2b12 2b14 2b16 2b1...
Description	36-bit LVTTL/GTLP Universal bus Transceiver<br>
File Size	77.84K / 8 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelect...
Part No.	HbAT54C HbAT54S HbAT54A HbAT54
OCR Text	... Code: N C D H K j Style: Pin 1.Anode 2.Cathode 3.Common Connection * HbAT54: Single Diode , also available as double d...b C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 ...
Description	Silicon Schottky barrier Double Diodes<br>
File Size	22.64K / 3 Page	View it Online	Download Datasheet

				HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HMbT8050
OCR Text	... Code: N C D H K j Style: Pin 1.base 2.Emitter 3.Collector *: Typical DIM A b C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80...
Description	NPN EPITAXIAL TRANSISTOR<br>
File Size	29.39K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	...5V 20s PULSE WIDTH T = 175 C j 1 10 100 1 0.1 20s PULSE WIDTH T = 25 C j 1 10 100 10 0.1 VDS , Drain-to-Source Voltage (V...b R )D SS tp 200 0 25 50 75 100 125 150 175 Starting Tj , junction Temperature ( C) Fig ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package<br>60V Single N-Channel HEXFET Power MOSFET in a TO-262 package<br>Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)<br>Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)<br>Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)<br>Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?<br>
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	... factor D = t 1 / t 2 2. Peak T j = P DM x Z thjC + TC 0.0001 0.001 0.01 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig...b R )D SS tp 200 0 25 50 75 100 125 150 175 Starting Tj , junction Temperature ( C) Fig ...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?<br>
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPbF IRF1010NSTRL IRF1010NLPbF
OCR Text	...1 20s PULSE WIDTH T = 25 C j 1 10 100 1 0.1 20s PULSE WIDTH T = 175 C j 1 10 100 VDS , Drain-to-Source Voltage (V) VDS ...b R )D S S tp 100 0 25 50 75 100 125 150 175 Starting T , junction Temperature( C) j Fi...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package<br>55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package<br>Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)<br>Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)<br>Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)<br>Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?<br>
File Size	144.82K / 10 Page	View it Online	Download Datasheet

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