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ST Microelectronics
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| Part No. |
VNQ830P-E VNQ830PTR-E
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| OCR Text |
...g Energy EMAX Ptot Tj Tstg (L=1.5mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=9A) Power dissipation (per island) at Tlead=25C Junction Operating Temperature Storage Temperature 85 6.25 Internally Limited - 55 to 150 mJ W C C (Human Body Model: 40... |
| Description |
QUAD CHANNEL HIGH SIDE DRIVER
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| File Size |
205.17K /
21 Page |
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IRF[International Rectifier]
VISHAY SILICONIX
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| Part No. |
IRFBL10N60A
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| OCR Text |
...0C
Starting TJ = 25C, L = 7.5mH
RG = 25, IAS = 11A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, S... |
| Description |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
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| File Size |
119.74K /
8 Page |
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VISHAY INTERTECHNOLOGY INC
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| Part No. |
IRFIB7N50APBF
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| OCR Text |
...: starting t j = 25c, l = 4.5mh r g = 25 ? , i as = 11a. (see figure 12) pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 ... |
| Description |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
204.05K /
9 Page |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFF9N50
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| OCR Text |
... by junction temperature 2.l=18.5mh i as = 9 a,v dd =50v,r g =0 ? ,starting t j =25 3.i sd 9 a,di/dt 3 00a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating tempera... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
1,054.50K /
7 Page |
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SamHop Microelectronics
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| Part No. |
STU03L07 STD03L07
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| OCR Text |
...ting. c.starting t j =25 c,l=0.5mh,v dd = 40v.(see figure13) nc 4 v ds =35v,i d =4.5a,v gs =4.5v
stu03l07 std03l07 ver 1.0 www.samhop.com.tw apr,10,2014 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. outp... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
147.53K /
10 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STU10N25 STD10N25
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| OCR Text |
...ting. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) e.drain current limited by maximum junction temperature. _
stu10n25 std10n25 ver 1.0 www.samhop.com.tw oct,24,2013 3 tj( c ) i d , drain current(a) v ds , drain-to-source ... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
125.98K /
10 Page |
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it Online |
Download Datasheet |
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