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  200-600 Datasheet PDF File

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    BT138-600 BT138-500 BT138-800

Comset Semiconductor
Part No. BT138-600 BT138-500 BT138-800
OCR Text ... i h holding current i t = 200 ma, i gt = 50 ma - - 50 ma i d off-state leakage current v d = v drm max t j = 125c - - 0.5 ma v t on-state voltage i t = 15 a - - 1.7 v dv d /dt critical rate of rise of off-...
Description TRIACS

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    SEMIWELL[SemiWell Semiconductor]
Part No. BT139-600 BT139F-600
OCR Text ...rent Rating ( Non-Repetitive ) 200 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 Surge On-State Current [A] 150 VGT ...600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 1 Fig 8. Transient Thermal Imp...
Description Bi-Directional Triode Thyristor

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    NXP Semiconductors N.V.
Part No. BYC10D-600 BYC10D-600-15
OCR Text ...reverse current v r = 600 v - 9 200 a v r =500v; t j = 100 c - 1.1 3 ma dynamic characteristics t rr reverse recovery time i f =1a; v r =30v; di f /dt = 50 a/s; t j =25c; see figure 6 - 1530ns i f =10a; v r =400v; di f /dt = 500 a/s; t j...
Description Hyperfast power diode 600 V, SILICON, RECTIFIER DIODE, TO-220AC

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    NXP Semiconductors N.V.
Part No. BYC10DX-600 BYC10DX-600-15
OCR Text ...100c - 1.1 3 ma v r = 600 v - 9 200 a dynamic characteristics t rr reverse recovery time i f =1a; v r =30v; di f /dt = 50 a/s; t j = 25 c; see figure 6 - 1530ns i f =10a; v r = 400 v; di f /dt = 500 a/s; t j = 25 c; see figure 6 -18-ns ...
Description Hyperfast power diode 600 V, SILICON, RECTIFIER DIODE, TO-220AC

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    HTM4-600

SemiHow Co.,Ltd.
Part No. HTM4-600
OCR Text ...3 1.27 k 2.50.2 l2 . 3 m a x 3.200.2 package dimension htc4-600 (to-126) semihow rev.1.0 jan 2006 htx4-600 corresponding symbol measurement a(mm) 7.99 0.25 b(mm) 11.12 0.25 c(mm) 14.5 0.5 e(mm) 3.625 0.125 f(mm) 1.4 0.12 g(mm) 0.7...
Description 600V 4A TRIAC

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    BTA08-600 BTA08-600B BTA08-600BW BTA08-600C BTA08-600CW BTA08-600SW BTA08-600TC BTA08-800 BTA08-800B BTA08-800BW BTA08-8

STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
Part No. BTA08-600 BTA08-600B BTA08-600BW BTA08-600C BTA08-600CW BTA08-600SW BTA08-600TC BTA08-800 BTA08-800B BTA08-800BW BTA08-800C BTA08-800CW BTA08-800SW BTA08-800TC BTB08-600CWRG BTB08-600CRG BTA08-600CWRG BTA08-600CRG BTA08-600SWRG BTB08-800TWRG BTA08-600BRG 7472 T835-800B T835-800G T835-800H T840-600B T840-600G BTA08-8 BTA08-800TW BTB08-800B BTB08-800BW BTB08-800C BTB08-800CW BTB08-800SW BTB08-800TW BTA08-600TW T835-600B T835-600G T840-600H T835-600H T840-800B T810-600H BTB08-600SW T810-600B BTA08600B BTB08-400TWRG BTB08-700TWRG -BTA08-800B BTA08-800CWRG BTA08-800TWRG
OCR Text ...X. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 50 100 400 10 V/s V/s B 50 100 mA V V mA mA Unit (dV/dt)c (2) (dI/dt)c = 3.5 A/ms ...600 V BTA/BTB08-xxxB BTA/BTB108-xxxBW BTA/BTB08-xxxC BTA/BTB08-xxxCW BTA/BTB08-xxxSW BTA/BTB08-xxxTW...
Description Transient Voltage Suppressor Diodes 8A条双向可控硅
8A TRIACS 8A条双向可控硅
From old datasheet system
Triac, 800V, 8A

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    BYC20-600

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BYC20-600
OCR Text ...5 1.89 16 1.6 Max 1.97 2.34 2.9 200 3.0 Unit V V V A mA Static characteristics BYC20-600_1 (c) NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 -- 28 November 2007 4 of 10 NXP Semiconductors BYC20-600 Rec...
Description    Rectifier diode, hyperfast
Hyperfast power diode BYC20-600<SOD59 (TO-220AC)|<<http://www.nxp.com/packages/SOD59.html<1<,;

File Size 55.52K  /  10 Page

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    BT137F-600 BT137F BT137F-800G BT137F-500 BT137F-500G BT137F-600F BT137F-600G BT137F-800 BT137F-800F BT137F-500F BT137FSE

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. BT137F-600 BT137F BT137F-800G BT137F-500 BT137F-500G BT137F-600F BT137F-600G BT137F-800 BT137F-800F BT137F-500F BT137FSERIES
OCR Text ...5 A/s ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/s dVcom/dt - - 10 20 - V/s tgt - - - 2 - s February 1996 3 Rev 1.100 Philips Semiconductors Product specification Triacs ...
Description 1-of-8 Decoder 16-CDIP -55 to 125
DIODE DUAL SW 75V 350MW SOT-23
DIODE SWITCH 85V 150MW SOT-523
DIODE SWITCHING DUAL COMMON-ANODE 75V 215mA-Io 150mW 3000ns-trr SOT-523 3K/REEL
DIODE SWITCHING DUAL SERIES 75V 150mA-Io 200mW 4ns-trr SOT-323 3K/REEL
DIO SM DUAL SER BAV99W SOT323
Transient Voltage Suppressor Diodes
Triacs 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC
DIODE SWITCHING DUAL-DUAL COMMON-CATHODE/ANODE 75V 150mA-Io 200mW 4ns-trr SOT-363 3K/REEL 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC
SMD DIODE BAW56 70V 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC

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    BYR29-600 BYR29-800 BYR29-700 BYR29 BYR29-500 BYR29SERIES

International Rectifier, Corp.
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BYR29-600 BYR29-800 BYR29-700 BYR29 BYR29-500 BYR29SERIES
OCR Text ...60 5.0 MAX. 1.50 1.95 10 0.2 200 75 6 - UNIT V V A mA nC ns A V I dI F dt F 20 PF / W Vo = 1.26 V Rs = 0.03 Ohms BYR29 Tmb(max) / C D = 1.0 100 t 15 0.5 112.5 rr time 10 0.2 0.1 tp tp T t 1...
Description Rectifier diodes ultrafast 8 A, 800 V, SILICON, RECTIFIER DIODE
Ultra low drop voltage regulators with inhibit low ESR output capacitors compatible 整流二极管超
Rectifier diodes ultrafast(超快速整流二极管)

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