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  2.7-3.5ghz Datasheet PDF File

For 2.7-3.5ghz Found Datasheets File :: 2078    Search Time::2.5ms    
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    Q62702-F1359 BFG19S BFG19

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1359 BFG19S BFG19
OCR Text ...BFG 19S BFG19S Q62702-F1359 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7...
Description NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna)
From old datasheet system
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)

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    Q62702-F1494 BFR280W

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1494 BFR280W
OCR Text ...n BFR 280W REs Q62702-F1494 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...7.5 0.32 0.22 0.22 - GHz pF 0.5 dB 1.5 2 - IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base c...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems
From old datasheet system

File Size 56.22K  /  7 Page

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    VSC7146RH VSC7146

Vitesse Semiconductor Corporation
ETC
Part No. VSC7146RH VSC7146
OCR Text ...Full-Duplex Transceiver: - 1.06/2.12Gb/s for FibreChannel - 1.25/2.5Gb/s for Gigabit Ethernet * 20-Bit TTL Interface for Transmit and Receiv...7 8/28/00 (c) VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano, Camarillo, CA 93012 * 805/388...
Description 2.5Gb/s, 20-Bit Transceiver

File Size 251.12K  /  19 Page

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    BFR280 Q62702-F1298

http://
SIEMENS[Siemens Semiconductor Group]
Part No. BFR280 Q62702-F1298
OCR Text ...on BFR 280 REs Q62702-F1298 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage C...7.5 0.27 0.18 0.22 - GHz pF 0.45 dB 1.5 2 - IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base ...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)

File Size 57.01K  /  7 Page

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    MAX2611 MAX2611EUS

MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
Part No. MAX2611 MAX2611EUS
OCR Text ...OUT GND MAX2611 GND 2 1 IN GND IN IN CBLOCK SOT143 MAX2611 ________________________________________________...7 25 6 NOISE FIGURE (dB) 5 TA = +85C 4 TA = +25C TA = -40C GAIN (dB) 10 2.0GHz 3 ...
Description DC-to-Microwave Low-Noise Amplifier
DC-to-Microwave, Low-Noise Amplifier
DC-to-Microwave / Low-Noise Amplifier

File Size 54.29K  /  6 Page

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    MAX2671 MAX2671EUT-T MAX2673 MAX2673EUA MAX2663 MAX2660 MAX2660EUT-T MAX2661 MAX2661EUT-T MAX2663EUT-T

Maxim Integrated Produc...
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
Part No. MAX2671 MAX2671EUT-T MAX2673 MAX2673EUA MAX2663 MAX2660 MAX2660EUT-T MAX2661 MAX2661EUT-T MAX2663EUT-T
OCR Text 2.5GHz Upconverter Mixers General Description Features o RF Output Frequencies: 400MHz to 2.5GHz o Low Noise Figure: 9.3dB (900MHz, MAX267...7.1dBm at 8.3mA (MAX2661) 0.7dBm at 3.0mA (MAX2663) 9.6dBm at 11.8mA (MAX2671) 7.6dBm at 20.5mA (MAX...
Description 400MHz to 2.5GHz Upconverter Mixers

File Size 231.17K  /  16 Page

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    MGF1801 MGF1801B 1801B

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1801 MGF1801B 1801B
OCR Text ...=8GHz 0.50.15 3 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.50.2 QUALITY GRADE * IG...7 21.8 - Limits Typ - - - 200 - 90 9 23.0 - Max - - 20 250 -4.5 - - - 125 Unit V V A mA V mS dB dBm ...
Description TAPE CARRIER MICROWAVE POWER GaAs FET
From old datasheet system

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    2SC5551

SANYO[Sanyo Semicon Device]
Part No. 2SC5551
OCR Text ...5551] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Pa...7 5 3 2 hFE -- IC VCE=5V Collector Current, IC - mA 80 60 300A 250A 200A DC Curr...
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

File Size 42.01K  /  5 Page

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    ARJ2003 ARJ2003X ARJ2003Z ARJ22A4HZ ARJ2012 ARJ2012X ARJ2012Z ARJ2024 ARJ2024X ARJ2024Z ARJ204H ARJ204HX ARJ204HZ ARJ20A

Nais(Matsushita Electri...
Panasonic, Corp.
OSRAM GmbH
NAIS[Nais(Matsushita Electric Works)]
Matsushita Electric Works(Nais)
Part No. ARJ2003 ARJ2003X ARJ2003Z ARJ22A4HZ ARJ2012 ARJ2012X ARJ2012Z ARJ2024 ARJ2024X ARJ2024Z ARJ204H ARJ204HX ARJ204HZ ARJ20A03 ARJ20A03X ARJ20A03Z ARJ20A12 ARJ20A12X ARJ20A12Z ARJ20A24 ARJ20A24X ARJ20A24Z ARJ20A4H ARJ20A4HX ARJ20A4HZ ARJ2203 ARJ2203X ARJ2203Z ARJ2212 ARJ2212X ARJ2212Z ARJ2224 ARJ2224X ARJ2224Z ARJ224H ARJ224HX ARJ224HZ ARJ22A03 ARJ22A03X ARJ22A03Z ARJ22A12 ARJ22A12X ARJ22A12Z ARJ22A24 ARJ22A24X ARJ22A24Z ARJ22A4H ARJ22A4HX
OCR Text ... 10V DC 20cpm) (resistive load) 2 Form C Gold alloy Max. 150m 1W (at 5 GHz, Impedance 50 , V.S.W.R. &1.25) 10mA 10V DC (resistive load) 1W (...7 amplitude of 3 mm Vibration resistance 10 to 55 Hz at double Destructive amplitude of 5 mm Conditi...
Description    SMD RELAYS WITH 8GHz CAPABILITIES
SMD RELAYS WITH 8GHz CAPABILITIES 贴片继电器与8GHz的能

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    CXG1027TM

SONY[Sony Corporation]
Part No. CXG1027TM
OCR Text ...SSOP) * Low voltage operation : 2.9 V (Min.) * Low current consumption : 45 mA (Typ.) * High gain : 27.5 dB (Typ.) (for 1.5 GHz) 29.5 dB (Ty...7 VGG 5 6 L5 5.6nH Cp 1000pF (For 1.5 GHz) Cp 1000pF 1 10 R1 15 Cp 1000pF 2 ...
Description From old datasheet system
Driver Amplifier for Transmission

File Size 157.51K  /  6 Page

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