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Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
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| Part No. |
MP03HBT360-08 MP03HBT360-10 MP03HBT360-12 MP03HBT360-14 MP03HBT360-16 MP03HBT360-18 MP03HBN360-18 MP03HBP360-18 MP03HBN360-16 MP03HBN360-14 MP03HBP360-08 MP03HBP360-10
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| OCR Text |
...case = 75C 10ms half sine, Tj = 130c VR = 0 10ms half sine, Tj = 130c VR = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Max. 355 312 276 242 560 8.1 0.33x106 6.5 0.21x106 3000 Units A A A A A kA A2s kA A2s V
THERMAL AND... |
| Description |
Dual Thyristor, Thyristor/Diode Module 553 A, 1000 V, SCR
Dual Thyristor, Thyristor/Diode Module 553 A, 800 V, SCR
Dual Thyristor, Thyristor/Diode Module 560 A, 1400 V, SCR
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| File Size |
261.78K /
9 Page |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
ND431825
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| OCR Text |
...2 rT2 Test Conditions 1800V, TJ=130c 1800V, TJ=130c ITM=625A TJ = 130c, I = 15%IT(AV) to IT(AV) TJ = 130c, I = IT(AV) to ITSM TJ = 130c, I = 15%IT(AV) to ITSM VTM = A+ B Ln I +C I + D Sqrt I Minimum dV/dt Turn-On Time (Typical) Turn-Off Tim... |
| Description |
POW-R-BLOK Dual SCR Isolated Module (250 Amperes / 1800 Volts)
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| File Size |
99.43K /
4 Page |
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NTE Electronics, Inc.
NTE[NTE Electronics]
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| Part No. |
NTE5728
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| OCR Text |
...ff-State Leakage Current (TJ = +130c), IRRM, IDRM . . . . . . 50mA RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3000V Critical Rate of Rise of Off-State Voltage (TJ = +130c), dv/dt (Line... |
| Description |
Powerblock Module Powerblock模块
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| File Size |
30.06K /
3 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
SGE2658-1
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| OCR Text |
... 3 2S-3F #34, Single Insulation 130c 31 Bifilar Pin 3-4 3S-4F #34, Single Insulation 130c 31 Secondary Pin 6-7 6S-7F #46, Triple insulation 130c 1600
3. Physical Specification & Wiring Diagram
4. Packaging Marking - SGE2658-1
Blank... |
| Description |
Transformers
Magnetic Component Specification
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| File Size |
167.25K /
1 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
SGE2697-1
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| OCR Text |
...ation, 0.15, Single Insulation, 130c 130c 16 16 Bifilar Secondary Pin 6-5 6S-5F #50, Class 2 (JIS3202), 130c 1700
3. Physical Specification & Wiring Diagram
Microsemi Corporation Integrated Products. 11861 Western Ave., Garden Grove, ... |
| Description |
inverter transformer for CCFL inverter power supply
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| File Size |
181.42K /
1 Page |
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it Online |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
SGE2698-1
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| OCR Text |
...ation, 0.15, Single Insulation, 130c 130c 17 17 Bifilar Secondary Pin 6-5 6S-5F #50, Class 2 (JIS3202), 130c 1600
3. Physical Specification & Wiring Diagram
Microsemi Corporation Integrated Products. 11861 Western Ave., Garden Grove, ... |
| Description |
inverter transformer for CCFL inverter power supply INVERTER TRANSFORMER
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| File Size |
181.41K /
1 Page |
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it Online |
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KEMET[Kemet Corporation]
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| Part No. |
T498_1 T498
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| OCR Text |
...he power derating must begin at 130c. The power capability (allowing a +20C rise) for this device is the same from -55C through 130c. If the case power is defined as 150mW, then the power capability is defined as 150mW for this temperature ... |
| Description |
Product Update - T498 High Temperature ( 150) Tantalum SMT Capacitors
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| File Size |
157.06K /
3 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
VUO22-18NO1 VUO22-08NO1 VUO22-12NO1 VUO22-14NO1 VUO22-16NO1
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| OCR Text |
... 22
30 IF A 25 TVJ = 25C TVJ = 130c 20 60 max. 15 typ. 10 20 40 100 IFSM A 80 50 Hz 0.8 x VRRM 100 A2s I2dt
TVJ = 45C
TVJ = 45C
TVJ = 130c
TVJ = 130c
5
0 0.0
0.5
1.0
1.5
2.0 V 2.5 VF
0 10-3
10 10-2 10-1 ... |
| Description |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
Three Phase Rectifier Bridge
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| File Size |
50.45K /
2 Page |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
VUO34-18NO1 VUO34-08NO1 VUO34-12NO1 VUO34-14NO1 VUO34-16NO1 IXYSCORP-VUO34-16NO1
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| OCR Text |
...0 40 typ. 30 100 max. 100 TVJ = 130c TVJ = 25C TVJ = 130c 250 IFSM A 1000 A2s I2dt TVJ = 45C
IF
50 Hz 0.8 x VRRM
200
TVJ = 45C
TVJ = 130c
20 10 0 0.0 0 10-3 10 10-2 10-1 t s 100 1 t ms 10 50
0.5
1.0
1.5
2.0 V 2.5... |
| Description |
Three Phase Rectifier Bridge 3 PHASE, 36 A, 1800 V, SILICON, BRIDGE RECTIFIER DIODE
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
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| File Size |
50.79K /
2 Page |
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it Online |
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