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  100mh Datasheet PDF File

For 100mh Found Datasheets File :: 165    Search Time::1.375ms    
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    2SC3365

Inchange Semiconductor Company Limited
Part No. 2SC3365
OCR Text ... ; VCE=5V IC=10A ; VCE=5V 12 ,L=100mh MIN 400 10 2SC3365 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 50 50 |I |I V V A A Switching times resistive load ton ts tf Turn-on ti...
Description Silicon NPN Power Transistors

File Size 146.87K  /  4 Page

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    TIP127F TIP122F

TRANSYS Electronics Limited
Part No. TIP127F TIP122F
OCR Text ...m Junction to Case (1) IC=1A, L=100mh,P.R.F.=10Hz, VCC=20V, RBE=100 ohms ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO (sus) * IC=100mA, IB=0 Collector Emitter (sus) Voltage ICBO VCB=100V, ...
Description NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

File Size 130.93K  /  2 Page

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    PA51 PA51A

Cirrus Logic
Part No. PA51 PA51A
OCR Text ...10A 4.3mH 5.0mH 6.2mH 15mH 20mH 100mh SAFEOPERATINGAREA(SOA) The output stage of most power amplifiers has three distinct limitations: 1. The current handling capability of the transistor geometry and the wire bonds. 2. The second break...
Description POWER OPERATIONAL AMPLIFIERS

File Size 291.17K  /  5 Page

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    PA61

Cirrus Logic
Part No. PA61
OCR Text ...0mF 400mH 20mH 15V 20mF 10mF ** 100mh * If the inductive load is driven near steady state conditions, allowing the output voltage to drop more than 8V below the supply rail with ILIM = 10A or 15V below the supply rail with ILIM = 5A while t...
Description    POWER OPERATIONAL AMPLIFIERS

File Size 294.31K  /  5 Page

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    2SC2816

Inchange Semiconductor Company Limited
Part No. 2SC2816
OCR Text ...voltage IC=0.2A ; RBE= ;L=100mh 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturati...
Description Silicon NPN Power Transistors

File Size 145.19K  /  4 Page

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    2SC2979

Savantic, Inc.
Part No. 2SC2979
OCR Text ...ain CONDITIONS IC=0.2A; RBE=<,L=100mh IE=10mA ; IC=0 IC=0.75A; IB=0.15A IC=0.75A; IB=0.15A VCB=750V ;IE=0 VCE=650V; RBE=< IC=0.3A ; VCE=5V IC=1.5A ; VCE=5V 15 7 MIN 800 7 2SC2979 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1...
Description Silicon NPN Power Transistors

File Size 126.91K  /  4 Page

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    2SC3322

Inchange Semiconductor Company Limited
Part No. 2SC3322
OCR Text ...rent gain CONDITIONS IC=0.2A ,L=100mh;RBE= IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=750V; IE=0 VCE=650V; RBE= IC=0.5A ; VCE=5V IC=3A ; VCE=5V 15 7 MIN 800 7 TYP. 2SC3322 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE sat ICBO ICEO hF...
Description Silicon NPN Power Transistors

File Size 112.31K  /  3 Page

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    2SC3322

Savantic, Inc.
Part No. 2SC3322
OCR Text ...rent gain CONDITIONS IC=0.2A ,L=100mh;RBE=: IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=750V; IE=0 VCE=650V; RBE=: IC=0.5A ; VCE=5V IC=3A ; VCE=5V 15 7 MIN 800 7 2SC3322 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE sat ICBO ICEO hFE-1...
Description Silicon NPN Power Transistors

File Size 125.47K  /  3 Page

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    2SC3365

Savantic, Inc.
Part No. 2SC3365
OCR Text ...ain CONDITIONS IC=0.2A ;RBE=:,L=100mh IE=10mA ;IC=0 IC=5A; IB=1A IC=5A ;IB=1A VCB=400V; IE=0 VCE=350V; RBE=: IC=5A ; VCE=5V IC=10A ; VCE=5V 12 5 MIN 400 10 2SC3365 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 TYP. ...
Description Silicon NPN Power Transistors

File Size 174.83K  /  4 Page

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    IRF430

Seme LAB
Part No. IRF430
OCR Text ...00ms, d 2% 2) @ VDD = 50V , L 100mh , RG = 25W , Peak IL = 4.5A , Starting TJ = 25C 3) @ ISD 4.5A , di/dt 75A/ms , VDD BVDSS , TJ 150C , Suggested RG = 7.5W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail...
Description N-CHANNEL POWER MOSFET

File Size 20.73K  /  2 Page

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For 100mh Found Datasheets File :: 165    Search Time::1.375ms    
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