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RFMD[RF Micro Devices]
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| Part No. |
RF3854PCBA-41X RF3854
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| OCR Text |
... =2.7V, T=+25C
While meeting spectral mask While meeting spectral mask Difference between output power at GC=2.0V and GC=0.2V.
Out-of-Band Emission
Spectrum Emission Mask* Frequency Spacing 200kHz 250kHz 400kHz 600kHz to 1800kHz 1800... |
| Description |
LOW NOISE, MULTI-MODE, QUAD-BAND, QUADRATURE MODULATOR AND PA DRIVER
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| File Size |
522.68K /
26 Page |
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it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MSD4H13C MSD4B13C MSD4G13C
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| OCR Text |
... Wavelength Dominant Wavelength spectral Line 1/2 Width Reverse B(3).Voltage (VR) 4.2 4.9 430 470 65 10 2.05 2.40 1.80 2.20 632 624 20 5 568 573 30 5 2.10 2.80 Volts Volts Volts Volts nm nm nm Volts IF = 20mA IF = 20mA IF = 2mA IF = 2mA IF ... |
| Description |
10.0mm (0.39 inch) Two Digit NUMERIC STICK DISPLAY
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| File Size |
339.36K /
6 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9160HSR3 MRF6S9160HR3
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| OCR Text |
...- 20 dB Drain Efficiency -- 45% spectral Regrowth @ 400 kHz Offset = - 66 dBc spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM -- 2% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 160 Watts, Full Frequ... |
| Description |
RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
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| File Size |
532.81K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9130HSR3 MRF6S9130HR3
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| OCR Text |
...18.5 dB Drain Efficiency -- 44% spectral Regrowth @ 400 kHz Offset = - 63 dBc spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM -- 1.5% rms * Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW Output Power Features * Characteriz... |
| Description |
RF Power Field Effect Transistors
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| File Size |
467.46K /
12 Page |
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it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9125NR1 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 MRF6S9125NBR1
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| OCR Text |
...B Drain Efficiency -- 40% (Typ) spectral Regrowth @ 400 kHz Offset = - 63 dBc spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Freq... |
| Description |
RF Power Field Effect Transistors
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| File Size |
480.38K /
16 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9125NR1_06 MRF6S9125NBR1 MRF6S9125NR1
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| OCR Text |
...- 20 dB Drain Efficiency -- 40% spectral Regrowth @ 400 kHz Offset = - 63 dBc spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.8% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Freq... |
| Description |
RF Power Field Effect Transistors
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| File Size |
848.94K /
20 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MRF6S9060NR1 MRF6S9060NBR1
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| OCR Text |
...- 20 dB Drain Efficiency -- 46% spectral Regrowth @ 400 kHz Offset = - 62 dBc spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
621.21K /
16 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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