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For pulse Found Datasheets File :: 215545    Search Time::2.719ms    
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    2SB1001

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1001
OCR Text ...C = 0 VCE = -2 V, I C = -0.1 A (pulse test) VCE(sat) VBE(sat) fT Cob V V MHz pF I C = -1 A, I B = -0.1 A (pulse test) I C = -1 A, I B = -0.1 A (pulse test) VCE = -2 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz 1. The 2SB1001 i...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 31.26K  /  6 Page

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    2SB1002

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1002
OCR Text ...pF I C = -1 A, I B = -0.1 A (pulse test) I C = -1 A, I B = -0.1 A (pulse test) VCE = -2 V, I C = -10 mA (pulse test) VCB = -10 V, IE = 0, f = 1 MHz 1. The 2SB1002 is grouped by hFE as follows. CH 100 to 200 CJ 160 to 320 2 2SB10...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 30.84K  /  6 Page

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    IXYS
Part No. DSEP15-06A
OCR Text ...ss in the commutating switch pulse test: x pulse Width = 5 ms, Duty Cycle < 2.0 % y pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf (c) 2000 ...
Description Fast Recovery Diodes

File Size 33.97K  /  2 Page

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    2SB1012 2SB1012K 2SB1012_K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1012 2SB1012K 2SB1012_K
OCR Text ... on time Turn off time Note: 1. pulse test hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off 2 2SB1012(K) Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) -3 -1.0 -0.3 DC (T C Area of Safe Operati...
Description Silicon PNP Epitaxial

File Size 32.59K  /  6 Page

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    2SB1025

Hitachi Semiconductor
Part No. 2SB1025
OCR Text ...0 mA VCE = -5 V, I C = -500 mA (pulse test) V V MHz pF I C = -500 mA, I B = -50 mA (pulse test) VCE = -5 V, IC = -150 mA VCE = -5 V, IC = -150 mA VCB = -10 V, IE = 0, f = 1 MHz 1. The 2SB1025 is grouped by hFE1 as follows. DH 60 to...
Description Silicon PNP Epitaxial

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    IXYS
Part No. DSEP15-06B
OCR Text ... Dimensions see Outlines.pdf pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, ...
Description Fast Recovery Diodes

File Size 40.66K  /  2 Page

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    2SB1027

HITACHI[Hitachi Semiconductor]
Part No. 2SB1027
OCR Text ...E = 0 VCE = -5 V, IC = -0.15 A, pulse VCE = -5 V, IC = -0.5 A, pulse V V I C = -0.5 A, IB = -50 mA, pulse VCE = -5 V, IC = -0.15 A, pulse 1. The 2SB1027 is grouped by hFE1 as follows. EH 60 to 120 EJ 100 to 200 EK 160 to 320 2 ...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 29.73K  /  6 Page

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    2SB1028

HITACHI[Hitachi Semiconductor]
Part No. 2SB1028
OCR Text ...E = 0 VCE = -5 V, IC = -0.15 A, pulse VCE = -5 V, IC = -0.5 A, pulse V V I C = -0.5 A, IB = -50 mA, pulse VCE = -5 V, IC = -0.15 A, pulse 1. The 2SB1028 is grouped by hFE1 as follows. EL 60 to 120 EM 100 to 200 2 2SB1028 Max...
Description Silicon PNP Epitaxial

File Size 30.14K  /  6 Page

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    CDSOT23-SM712

Bourns Electronic Solutions
Part No. CDSOT23-SM712
OCR Text ...arameter symbol value unit peak pulse power (t p = 8/20 s) 1 p pk 400 w peak pulse current (8/20 s) i pp 17 a storage temperature t stg -55 to +150 c operating temperature t opr -55 to +150 c electrical characteristics (@ t a = 25 c unl...
Description CDSOT23-SM712

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    2SB1032 2SB1032K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1032 2SB1032K
OCR Text ... on time Turn off time Note: 1. pulse test hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off 2 2SB1032(K) Maximum Collector Dissipation Curve 100 Collector power dissipation Pc (W) -30 -10 -3 DC Area of Safe Operation iC ...
Description Silicon PNP Triple Diffused

File Size 35.68K  /  6 Page

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For pulse Found Datasheets File :: 215545    Search Time::2.719ms    
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