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INFINEON[Infineon Technologies AG]
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Part No. |
BSC027N03S BSC027N03SG
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OCR Text |
OptiMOS(R)2 Power-Transistor
Features * Fast switching MOSFET for SMPS * Optimized technology for notebook DC/DC converters * Qualified acc...T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 ... |
Description |
OptiMOS?2 Power-Transistor OptiMOS㈢2 Power-Transistor OptiMOS?? Power-Transistor
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File Size |
368.47K /
10 Page |
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it Online |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
BSL307SP
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OCR Text |
OptiMOS-P Small-Signal-Transistor
Feature * P-Channel * Enhancement mode * Logic Level * 150C operating temperature * Avalanche rated * dv/...t 5 sec. Page 2
2001-12-12
Preliminary data Electrical Characteristics, at Tj = 25 C, unless ... |
Description |
OptiMOS -P Small-Signal-Transistor Low Voltage MOSFETs - OptiMOS MOSFET, -30V, TSOP-6
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File Size |
77.12K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
IPD800N06NG
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OCR Text |
OptiMOS(R) Power-Transistor
Features * For fast switching converters and sync. rectification * N-channel enhancement - normal level * 175 C...T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 ... |
Description |
OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor OptiMOS??Power-Transistor
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File Size |
379.50K /
9 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
SPB100N06S2-05 SPP100N06S2-05
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OCR Text |
OptiMOS(R) Power-Transistor
Feature
* N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
55 4.7 100
P- TO220 ...T j , Tstg
400 810 30 6 20 300 -55... +175 55/175/56 kV/s V W C mJ
Avalanche energy, single pu... |
Description |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; NL; 5 mOhm OptiMOS Power-Transistor
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File Size |
312.35K /
8 Page |
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it Online |
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Price and Availability
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