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Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
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Part No. |
R5509-72 R5509-42
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OCR Text |
...1
SAMPLE TEMPERATURE
InAlAs/ingaas
single quantum wells
Photoluminescence spectra emitted from a sample with different ingaas well widths. This data proves that intensity distribution of the spectrum corresponding to each quantum well... |
Description |
NIR PHOTOMULTIPLIER TUBES
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File Size |
389.92K /
12 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
PD8XX3 PD8933
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OCR Text |
ingaas AVALANCHE PHOTO DIODES
TYPE NAME
PD8933
FEATURES
* 35 m active diameter * Low noise * High speed response * Small dark current * High quantum efficiency
DESCRIPTION
PD8XX3 series are ingaas avalanche photodiode which has... |
Description |
ingaas AVALANCHE PHOTO DIODES
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File Size |
127.36K /
3 Page |
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it Online |
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Sumitomo Electric Industries, Ltd.
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Part No. |
FRM3Z232BS-A
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OCR Text |
...n this pin preamplifier uses an ingaas pin chip with a gaas transimpedance preamplifier. the bs package is designed for surface mount pc board assembly, and the bs-a is designed for through-hole mount assembly. the package is connected wit... |
Description |
ingaas-PIN/Preamp Preamp ingaas-PIN/Preamp前置放大
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File Size |
601.00K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
PD839C4
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OCR Text |
ingaas AVALANCHE PHOTO DIODES
PD839C4
DESCRIPTION PD839C4 is a 35m ingaas Avalanche Photodiodes (APD) with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optic... |
Description |
ingaas AVALANCHE PHOTO DIODES
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File Size |
45.05K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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