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Vishay
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| Part No. |
TLW.79..
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| OCR Text |
....62 mm square package utilizing highly developed (AS) AllnGaP and InGaN technologies. The supreme heat dissipation of TELUXTM allows applications at high ambient temperatures. All packing units are binned for luminous flux and color to achi... |
| Description |
TELUX?LED
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| File Size |
180.94K /
14 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN1068
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| OCR Text |
... modified afterwards. costs are highly dependent on the flexibility given to the device (ability to be easily erased or programmed). rom i...diffused wafers (selected products) wafer probing assembly final test shipment **wafer and assembly... |
| Description |
MCUS - SELECTING BETWEEN ROM, FASTROM AND FLASH FOR A MICROCONTROLLER
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| File Size |
85.41K /
8 Page |
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it Online |
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Vishay
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| Part No. |
TLW.76..
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| OCR Text |
....62 mm square package utilizing highly developed (as) allngap and ingan technologies. the supreme heat dissipation of telux? allows applications at high ambient temperatures. all packing units are binned for luminous flux and color to achie... |
| Description |
TELUXLED
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| File Size |
183.57K /
14 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN1224
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| OCR Text |
...substrate by the diffusion of a highly doped p-type region. consequently, ldmos has excellent high frequency response because of its high f t and superior gain due to the low feedback capacitance and reduced source inductance. an additiona... |
| Description |
LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION
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| File Size |
58.37K /
7 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN1226
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| OCR Text |
...ection is formed by diffusing a highly doped p-type region, which acts like an ohmic connection from the source at the surface of the substrate, eliminating the need for parasitic wire bonds. this method also eliminates the ceramic interfac... |
| Description |
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
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| File Size |
38.53K /
4 Page |
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it Online |
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Price and Availability
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