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For generation Found Datasheets File :: 35481 Search Time::1.094ms
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				International Rectifier
Part No.	IRG4PC30UPBF
OCR Text	...ing, >200 kHz in resonant mode generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3 Industry standard TO-247AC package Lead-Free C UltraFast Speed IGBT VCES = 600V G E VCE(on...
Description	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
File Size	267.40K / 9 Page	View it Online	Download Datasheet


Part No.	MT29F4G16BABWP
OCR Text	... f v cc : 2.7v?3.6v a second generation die b package: 48 tsop type i (lead-free) wp 48 tsop type i (new version, wa 8gb device only, lead-free) 48 tsop type i (contact factory) wg operating temperature: commercial (0c to 70c) none e...
Description	256M X 16 FLASH 2.7V PROM, 30 ns, PDSO48
File Size	995.07K / 57 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PC40FDPBF
OCR Text	...ng, >20 kHz in resonant mode). generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	345.33K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PC50S-P
OCR Text	...erating frequencies ( < 1kHz) * generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3 * Industry standard TO-247AC package * Surface Mountable C Standard Speed IGBT VCES = 600V G E ...
Description	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
File Size	144.00K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PC50UPBF
OCR Text	...ng, >200 kHz in resonant mode * generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3 * Industry standard TO-247AC package * Lead-Free C UltraFast Speed IGBT VCES = 600V G E VCE(...
Description	55 A, 600 V, N-CHANNEL IGBT, TO-247AC INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
File Size	631.85K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	LPC812M101FD20 LPC812M101JDH16 LPC812M101FDH20 LPC812M101JDH20 LPC811M001JDH16 LPC811M001FDH16 LPC812M101FDH16
OCR Text	...en-drain pins. ? gpio interrupt generation capability with boolean pattern-matching feature on eight gpio inputs. ? switch matrix for flexible config uration of each i/o pin function. lpc81xm 32-bit arm cortex-m0+ microcontrolle r; up to 1...
Description	32-bit ARM Cortex-M0 microcontroller; 16 kB flash and 4 kB SRAM 32-bit ARM Cortex-M0 microcontroller; 8 kB flash and 2 kB SRAM
File Size	764.28K / 76 Page	View it Online	Download Datasheet

				PERICOM[Pericom Semiconductor Corporation]
Part No.	PI74FCT162511 PI74FCT162511T PI74FCT16511T
OCR Text	...ternally disabled during parity generation. This means that when generating parity in the A-to-B direction, there is no need to add a pull-up resistor to guarantee state. The pin will still function properly as the parity output for the B-t...
Description	Fast CMOS 16-Bit Registered/Latched Transceiver With Parity
File Size	86.88K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	PCA9620H
OCR Text	...internal capacitors for on-chip generation of the lcd driving voltages 2. features and benefits ? aec q100 grade 2 compliant for automotive applications ? low power consumption ? extended operating temperature range from ? 40 ? c to +105...
Description	60 x 8 LCD high-drive segment driver for automotive and industrial
File Size	1,178.17K / 78 Page	View it Online	Download Datasheet

For generation Found Datasheets File :: 35481 Search Time::1.094ms
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