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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15M321
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Description |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
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File Size |
257.03K /
6 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15Q311
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Description |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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File Size |
167.37K /
7 Page |
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it Online |
Download Datasheet
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Diotec Elektronische DIOTEC[Diotec Semiconductor] Diotec Semiconductor AG
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Part No. |
MYS40 MYS250 MYS80 MYS125
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Description |
Surface Mount Si-Bridge Rectifiers WIRE, ETFE, TEFZEL, 14AWG, BLACK, 100M; Area, conductor CSA:1.675mm2; Conductor make-up:37/0.250; Voltage rating, AC:600V; Current rating:23A; Colour, primary insulation:Black; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes Patch Panel; Mounting Type:2U; Body Material:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes 0.5 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE
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File Size |
136.18K /
2 Page |
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it Online |
Download Datasheet
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General Electric Solid State GESS[GE Solid State]
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Part No. |
3N206 3N204 3N205
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Description |
Silicon dual insulated-gate field-effect transistor. Silicon Dual Insulated-Gate Field-Effect Transistors
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File Size |
359.86K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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