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MSK4422U 02CIS DF30JC10 MP1740 A2000 60103 AQV214H 10015
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    DS1265W DS1265W-DS1265W-150 DS1265W-100 DS1265W-150 DS1265W-100-IND DS1265W-150-IND

MAXIM - Dallas Semiconductor
Dallas Semiconducotr
Part No. DS1265W DS1265W-DS1265W-150 DS1265W-100 DS1265W-150 DS1265W-100-IND DS1265W-150-IND
OCR Text ...rite cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. Th...
Description 3.3V 8Mb Nonvolatile SRAM
From old datasheet system

File Size 153.26K  /  8 Page

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    Sanyo
Part No. LA4422 1486
OCR Text ...ever, to make the starting time earlier at the time of the power supply switch ON. If CNF is made larger, these are reversed. (b) Bootstrap capacitor CBS The low cutoff frequency may be somewhat influenced, but the drive at a low frequency ...
Description Monolithic Linear IC
From old datasheet system

File Size 464.08K  /  10 Page

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    Maxim Integrated Products, Inc.
Part No. DS1258AB-70
OCR Text ...rite cycle is terminated by the earlier rising edge of ceu and/or cel , or we . all address inputs must be kept valid throughout the write cycle. we must return to the high state for a minimum recovery time (t wr ) before another cycl...
Description 128k x 16 Nonvolatile SRAM 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, DIP40

File Size 156.07K  /  8 Page

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    Maxim Integrated Products, Inc.
Part No. DS38464-070
OCR Text ...rite cycle is terminated by the earlier rising edge of ce\ or we\. all address inputs must be kept valid throughout the write cycle. we\ must return to the high state for a minimum recovery time (t wr ) before another cycle can be initiat...
Description 3.3V 64k x 40 NV SRAM SIMM 64K X 40 NON-VOLATILE SRAM MODULE, 70 ns, SMA72

File Size 220.63K  /  11 Page

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    Sanyo
Part No. LC66358C LC66354C
OCR Text ... These products differ from the earlier LC66358A Series and LC66358B Series in the power-supply voltage range, the operating speed, and other points. * Evaluation LSIs -- LC66599 (evaluation chip) + EVA85/800-TB6630X -- LC66E308 (on-chip EP...
Description CMOS LSI

File Size 130.19K  /  21 Page

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    Maxim Integrated Products, Inc.
Part No. DS1265Y DS1265AB
OCR Text ...rite cycle is terminated by the earlier rising edge of ce or we . all address inputs must be kept valid throughout the write cycle. we must return to the high state for a minimum recovery time (t wr ) before another cycle can be initi- ...
Description 8M Nonvolatile SRAM(8M非易失性静态RAM) 8M非易失SRAM
8M Nonvolatile SRAM(8M非易失性静态RAM) 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36

File Size 65.41K  /  8 Page

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    Sanyo
Part No. LA4160 1467
OCR Text ...e of the power amplifier is set earlier than that of the preamplifier or the power supply is turned ON immediately after turning OFF, it may happen that the shock noise of the preamplifier cannot be masked. In this case, a germanium diode i...
Description Monolithic Linear IC
From old datasheet system

File Size 327.46K  /  11 Page

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    DS1350AB DS1350AB-100 DS1350AB-70 DS1350ABP-100-IND DS1350ABP-70-IND DS1350Y DS1350Y-70 DS1350YP-70-IND DS1330YP-100-IND

Maxim Integrated Products, Inc.
DALLAS[Dallas Semiconductor]
DALLAS[Dallas Semiconducotr]
MAXIM - Dallas Semiconductor
Part No. DS1350AB DS1350AB-100 DS1350AB-70 DS1350ABP-100-IND DS1350ABP-70-IND DS1350Y DS1350Y-70 DS1350YP-70-IND DS1330YP-100-IND DS1330Y-100
OCR Text ...rite cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. Th...
Description 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34
4096k Nonvolatile SRAM with Battery Monitor
1024k Nonvolatile SRAM with Battery Monitor

File Size 227.11K  /  12 Page

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    DS1265Y DS1265AB DS1265Y/AB

Maxim Integrated Products, Inc.
Dallas Semiconductor
Dallas Semiconducotr
Part No. DS1265Y DS1265AB DS1265Y/AB
OCR Text ...rite cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. Th...
Description 8M Nonvolatile SRAM 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36

File Size 157.58K  /  8 Page

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    Applied Micro Circuits, Corp.
Part No. 29KPERIPH
OCR Text ...nterrupt-clearing load or store earlier in the handler may not help, as the load or store is not guaranteed to actually execute any earlier. work-around the way to work around this situation is to force the load/store to complete and guaran...
Description on an Am29030 Microprocessor Design Using Slow Peripherals with 29K Family Processors 在一个Am29030微处理器的设计中使用29K型系列处理器慢周

File Size 58.68K  /  3 Page

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