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24M00 KE82A RE46C129 FQB9N25C MT46V32 2M10V 01102 LT771
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    KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004CKG

SAMSUNG[Samsung semiconductor]
Part No. KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004CKG
OCR Text ...fore proper device operation is achieved. 2. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3. Measured...
Description 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V

File Size 267.85K  /  15 Page

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    ON Semi
Part No. SN54_74LS221 ON2869
OCR Text ...tput pulse of 30 nanoseconds is achieved. Output rise and fall times are independent of pulse length. Pulse width stability is achieved through internal compensation and is virtually independent of VCC and temperature. In most applications,...
Description DUAL MONOSTABLE MULTIVIBRATORS WITH SCHMITT-TRIGGER INPUTS
From old datasheet system

File Size 69.90K  /  5 Page

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    RF2131

RF Micro Devices
Part No. RF2131
OCR Text ...inear class AB operation can be achieved by raising the bias level. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power and efficiency characteristics. Optimum Technology Matching(R) Appli...
Description IC,RF AMPLIFIER,GAAS,SOP,8PIN,PLASTIC

File Size 83.72K  /  10 Page

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    Conexant
Part No. PS2500
OCR Text ... of less than 100 s can thus be achieved with a 10 MHz reference. The PS2500's lower in-band phase noise also permits the use of lower cost Voltage Controlled Oscillators (VCOs) in customer applications. The PS2500 has a Frequency Power Ste...
Description 2.2 GHz Fractional-N Frequency Synthesizer
From old datasheet system

File Size 210.09K  /  28 Page

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    KMM5361205C2WG KMM5361205C2W

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. KMM5361205C2WG KMM5361205C2W
OCR Text ...fore proper device operation is achieved. 2. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3. Measured...
Description 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh

File Size 281.12K  /  17 Page

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    KMM5361205C2W

Samsung Semiconductor
Part No. KMM5361205C2W
OCR Text ...fore proper device operation is achieved. 2. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3. Measured...
Description 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

File Size 277.25K  /  17 Page

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    KMM53632004BKG KMM53632004BK

SAMSUNG[Samsung semiconductor]
Part No. KMM53632004BKG KMM53632004BK
OCR Text ...fore proper device operation is achieved. 2. Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to ...
Description 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V

File Size 433.74K  /  19 Page

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    KMM53632004CKG KMM53632004CK

SAMSUNG[Samsung semiconductor]
Part No. KMM53632004CKG KMM53632004CK
OCR Text ...fore proper device operation is achieved. 2. Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to ...
Description 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V

File Size 465.29K  /  21 Page

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    KMM53632004CK

Samsung Semiconductor
Part No. KMM53632004CK
OCR Text ...fore proper device operation is achieved. 2. Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to ...
Description 32MBx36 DRAM Simm Using 16MBx4 & 16MBx1

File Size 461.43K  /  21 Page

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