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Duracell
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| Part No. |
PS7200E-1a-a PS7200E-1a-F3-a PS7200E-1a-E3-a
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| OCR Text |
... description the ps7200e-1a is a low on-state resist ance solid state relay containing a gaas led on the light emitting side (input side)...90 % 0 v o = 5 v 50 % output input *2 the turn-on time and turn-off time are specified as inp... |
| Description |
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| File Size |
197.72K /
14 Page |
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California Eastern Laboratories, Inc.
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| Part No. |
NE677M04-T2-a
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| OCR Text |
... nec's hft3 wafer process. with a transition frequency of 15 ghz, the ne677m04 is usable in applications from 100 mhz to 3 ghz. the ne677m04...90 o +45 o +0o +0 o 5 10 15 20 -45 o -90 o -135 o +180 o +135 o 0.100 0.72 -28.02 23.85 159.39 0.01... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRaNSISTOR 中功率NPN硅高频晶体管
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| File Size |
134.98K /
8 Page |
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California Eastern Laboratories
Duracell
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| Part No. |
NE663M04-T2-a
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| OCR Text |
...ackage: sot-343 footprint, with a height of just 0.59 mm. flat lead style for better rf performance. nec's ne663m04 is fabricated using nec'...90 ma, f = 2 ghz ghz 13 15 |s 21e | 2 insertion power gain at v ce = 2 v, i c = 50 ma, f = 2 ghz d... |
| Description |
NPN SILICON HIGH FREQUENCY TRaNSISTOR
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| File Size |
195.69K /
10 Page |
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NEC Corp.
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| Part No. |
UPa827TF-T1-a
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| OCR Text |
...nt at v cb = 5 v, i e = 0 a 0.1 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a 0.1 h fe dc current gain 1 at ...90 0.84 -34.90 2.37 133.96 0.13 63.53 0.86 -27.55 1.00 0.82 -38.48 2.33 129.63 0.14 61.18 0.84 -30.4... |
| Description |
NPN SILICON EPITaXIaL TWIN TRaNSISTOR
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| File Size |
149.44K /
6 Page |
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Electronic Theatre Controls, Inc.
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| Part No. |
aNaD-160W-a-10-SM aNaD-158W-a-10-SM aNaD-159W-a-110-SM
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| OCR Text |
a-com division of amp incorporated n north america: tel. (800) 366-2266, fax (800) 618-8883 n asia/pacific: tel.+85 2 2111 8088, fax...90 .90 22.86 22.86 .90 .90 22.86 22.86 ( ( ( ( ( ( ( ( ( ( ( ( ( ) ) ) ) ) ) ) ) ) ) ) ) ) .75 19.05... |
| Description |
WLL Subscriber antenna 用户环路天线
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| File Size |
84.97K /
2 Page |
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California Eastern Laboratories, Inc.
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| Part No. |
NE68130-T1-a NE68119-T1-a NE68118-T1-a NE68133-T1B-a
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| OCR Text |
... 3.0 1.0 2.0 3.0 0 10 20 msg g a nf v ce = 3 v, i c = 5 ma mag nec's npn silicon high frequency transistor silicon transistor ne681 serie...90 0.78 v ce = 2.5 v, i c = 1 ma 500 0.97 13.86 0.66 43 0.46 freq. nf opt g a opt (mhz) (db)... |
| Description |
NPN SILICON HIGH FREQUENCY TRaNSISTOR NPN硅高频晶体管
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| File Size |
597.32K /
21 Page |
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MICRO-EPSILON
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| Part No. |
DT3010-U3-a-C3
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| OCR Text |
...ting isplacement ransducers) is a non-contacting displacement measuring system operating on the eddy current principle. it is used for measu...90: 3 0.45 m (10 0.15 ft) c6/90: 6 0.9 m (20 0.3 ft) 16 (0.6) 16 (0.6) 20 (0.8) 20 (0.8) electron... |
| Description |
POSITION, LINEaR SENSOR-EDDY CURRENT, 3mm, 4-20ma
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| File Size |
279.75K /
8 Page |
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it Online |
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