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  8-bit 2m Datasheet PDF File

For 8-bit 2m Found Datasheets File :: 3440    Search Time::2.171ms    
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    MB84VD2008 MB84VD2008-10 MB84VD2009 MB84VD2009-10

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Part No. MB84VD2008 MB84VD2008-10 MB84VD2009 MB84VD2009-10
OCR Text ...rchitecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any combination of sectors can be concurrently erased. Al...Bit feature for detection of program or erase cycle completion * Ready-Busy output (RY/BY) Hardware ...
Description 8M (x 16) FLASH MEMORY & 2m (x 16) STATIC RAM

File Size 181.11K  /  30 Page

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    VP2611 VP2611CGGH1R

Mitel Networks Corporation
Part No. VP2611 VP2611CGGH1R
OCR Text ... frame rates Inputs YUV data in 8 x 8 sub block format Outputs run length coded coefficients On chip motion vector estimator with +/-7 pixel...BIT STREAM 64kb to 2mb/s CCIR601 RESOLUTION Y 720 X 288 Cr/Cb 360 x 288 Y 720 X 240 Cr/Cb 360 x 2...
Description H.261 Encoder

File Size 150.33K  /  14 Page

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    VP2612 VP2612CGGPFR

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. VP2612 VP2612CGGPFR
OCR Text ...the system controller, and only 8 bits of PSPARE and GSPARE information can be transmitted per picture or GOB respectively. The temporal ref...bit stuffing. This block is also responsible for converting the absolute values that are output from...
Description Video Multiplexer(用于视频电话和视频会议的视频多路转换

File Size 154.39K  /  11 Page

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    VT82C693

VIA Technologies
ETC
N.A.
Part No. VT82C693
OCR Text ... / 2m / 4M / 8M / 16MxN DRAMs - 8 banks up to 1GB DRAMs (128Mb DRAM technology) - Flexible row and column addresses - 64-bit data width only - 3.3V DRAM interface with 5V-tolerant inputs - Programmable I/O drive capability for MA, command, ...
Description APOLLO PRO-PLUS

File Size 122.76K  /  7 Page

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    W536030A W536060A W536090A W536120A

Winbond Electronics
WINBOND[Winbond]
Part No. W536030A W536060A W536090A W536120A
OCR Text ...al clock source, 4-bit ALU, two 8-bit timers, one 14 bits divider, maximum 24 pads for input or output, 8 interrupt sources and 8-level nesting for subroutine/interrupt applications. Speech unit, integrated as a single chip with maximum 128...
Description MDPCM Voice/Melody w/64x16 ~ 40x8 LCD, 256x4x2 LCD RAM, 1/8&1/16 Duty, 1/4&1/5 Bias, 32Kx20 ROM, 1.4
VOICE/ MELODY / LCD CONTROLLER

File Size 95.57K  /  12 Page

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    K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-

Samsung semiconductor
Samsung Electronic
Part No. K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock * Burst read single-bit write operation * DQM (x4,x8) & L(U)DQM (x16) for masking...
Description 64Mb H-die SDRAM Specification

File Size 142.04K  /  14 Page

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    K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us re...
Description 2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

File Size 1,151.85K  /  43 Page

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    K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us re...
Description 2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 100.95K  /  12 Page

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    K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us re...
Description LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3
LED ORANGE DIFFUSED 2X5 RECT
CONNECTOR ACCESSORY
LED ORG/RED DIFFUSED 2X5MM RECT
-2m x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

File Size 99.80K  /  12 Page

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