...gned to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this docu...
...-25 V, IE = 0, f = 1 MHz VCE = -6 V, f = 10 Hz I C = -50 A Rg = 50 k f = 1 kHz
Typ -- -- -- -- -- -- -- 120 1.8 --
-90 -- --
DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage
...
...-25 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -50 A Rg = 50 k, f = 1 kHz
Min -90 -- --
Typ -- -- -- -- -- -- 120 1.8 2
-120 -- -- -- 250 -- -- -- -- -- 120 1.8 2
DC current transfer ratio hFE* Base to emitter voltage VBE Collector ...
...00 150 -120 -120 -5 180 520 - 0.6 V MHz mV min typ max -100 -1 Unit nA A V V V
*h
FE
Rank classification
R 180 ~ 360 S 260 ~ 520 h...8 -15A -10A -4 -5A 0 0 40 80 120 160 200 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -50 25C Ta=75C -25C
...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...j Tstg
2 1
Ratings -20 -16 -6 -2 -3 1 150 -55 to +150
Unit V V V A A W C C
Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the al...8
-0.2
-60
-0.15
-0.1
-40
0.4
-20
-0.05 mA
IB = 0 0 50 100 150 Ambient Temp...
...j Tstg
2 1
Ratings -70 -50 -6 -1 -1.5 1 150 -55 to +150
Unit V V V A A W C C
Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the ...8
-60
-0.25
-0.2
-40
-0.15
0.4
-0.1 -20 -0.05 mA IB = 0
0
100 150 50 Ambi...