| |
|
 |
SamHop Microelectronics...
|
| Part No. |
STUD449S
|
| OCR Text |
...ting. d.starting t j =25 c,l=0.5mh,v dd = -20v.(see figure13) _ _ _
www.samhop.com.tw apr,01,2010 3 tj( c) -i d , drain current(a) -v ds...9a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =-250ua 1.15 1.10 1... |
| Description |
Super high dense cell design for low RDS(ON).
|
| File Size |
121.03K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
SamHop Microelectronics...
|
| Part No. |
STUD412S
|
| OCR Text |
...ting. d.starting t j =25 c,l=0.5mh,r g =25 ,v dd =20v,v gs =10v .(see figure13) _ _ stu/d412s ver 1.0 www.samhop.com.tw aug,07,2008 2 i s ...9a v gs =10v i d =11a 1. 3 1. 2 1. 1 1. 0 0. 9 0. 8 0. 7 0. 6 - 50 - 25 0 25 50 75 100 125 150 v ds ... |
| Description |
Super high dense cell design for low RDS(ON).
|
| File Size |
96.83K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
SamHop
|
| Part No. |
STM8330
|
| OCR Text |
...ting. d.starting t j =25 c,l=0.5mh,v dd = 20v,v gs =10v.(see figure13) _ _ _ b ver 1.0
stm8330 www.samhop.com.tw mar,18,2010 4 i d , drai...9a v g s =10v i d =6a 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 0... |
| Description |
Dual Enhancement Mode Field Effect Transistor
|
| File Size |
274.06K /
11 Page |
View
it Online |
Download Datasheet |
| |
|
|
SamHop Microelectronics...
|
| Part No. |
STP656F
|
| OCR Text |
...ting. d.starting t j =25 c,l=0.5mh,v dd = 30v.(see figure13) _ _ _ 1 ver 1.0 15 2180 196 132 40 47 65 37 34 19 21 29 4 9 0.76 1.3 17 1 1.8 ...9a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.30 1.20 1.... |
| Description |
Super high dense cell design for low RDS(ON).
|
| File Size |
118.97K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
SamHop Microelectronics...
|
| Part No. |
STM4605
|
| OCR Text |
...ting. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13)
ver 1.0 www.samhop.com.tw jul,27,2010 3 t j ( c ) -i d , drain current(a) -...9a
ver 1.0 www.samhop.com.tw jul,27,2010 4 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure... |
| Description |
Super high dense cell design for low RDS(ON).
|
| File Size |
172.05K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
SamHop Microelectronics...
|
| Part No. |
STU16L01
|
| OCR Text |
...ting. c.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) _ _ 1 1.7 3 18 nc 7.5 v ds =50v,i d =6.5a,v gs =4.5v
stu/d16l01 ver 1.0...9a v gs =10v i d =6.5a v gs =4v v gs =10v 25 20 15 10 5 1 v ds =v gs i d =250ua v gs =4.5v tj=125 c ... |
| Description |
Super high dense cell design for low RDS(ON).
|
| File Size |
121.51K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| Part No. |
WFF640
|
| OCR Text |
... by junction temperature 2.l=18.5mh, i as = 18a,v dd =50 v , r g =0 ,starting t j =25 3.i sd 18a,di/d t 300 a /us, v dd <bv dss ,s t arti ng tj = 25 4.pulse t e s t : pulse width 300us,du t y c y cl e 2% 5.essential l y indepe n dent... |
| Description |
Silicon N-Channel MOSFET
|
| File Size |
457.29K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
SamHop Microelectronics...
|
| Part No. |
STUD20L01A
|
| OCR Text |
...ting. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) _ _ _ 1 1.8 3 22
stu/d20l01a ver 1.0 www.samhop.com.tw dec,02,2011 3 tj( c)...9a v gs =10v i d =10a v gs =4v v gs =10v 40 32 24 16 8 1
stu/d20l01a ver 1.0 www.samhop.com.tw dec... |
| Description |
Super high dense cell design for low RDS(ON).
|
| File Size |
103.26K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
