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SIT9102 P80NF 59000 RS2504 HA4201CB B1169 SIT9102 PRB351
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  400v.6 Datasheet PDF File

For 400v.6 Found Datasheets File :: 13233    Search Time::1.516ms    
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    Microsemi
Part No. APTC80H29T3G
OCR Text ... charge v gs = 10v v bus = 400v i d = 15a 45 nc t d(on) turn-on delay time 10 t r rise time 13 t d(off) turn-of...6 v/ns t rr reverse recovery time t j = 25c 550 ns q rr reverse recovery charge i s ...
Description Full Bridge

File Size 424.47K  /  7 Page

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    Microsemi
Part No. APTC80H29SCTG
OCR Text ... charge v gs = 10v v bus = 400v i d = 15a 91 nc q gs gate C source charge 12 q gd gate C drain charge 46 t d(on)...6 0.7 0.8 0.9 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration ...
Description Full Bridge Series And Parallel Diodes

File Size 793.50K  /  9 Page

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    Microsemi
Part No. APTC80H15T3G
OCR Text ... charge v gs = 10v v bus = 400v i d = 28a 90 nc t d(on) turn-on delay time 10 t r rise time 13 t d(off) turn-of...6 v/ns t rr reverse recovery time t j = 25c 550 ns q rr reverse recovery charge i s ...
Description Full Bridge

File Size 423.90K  /  7 Page

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    Microsemi
Part No. APTC80H15T1G
OCR Text ... charge v gs = 10v v bus = 400v i d = 28a 90 nc t d(on) turn-on delay time 10 t r rise time 13 t d(off) turn-of...6 v/ns t rr reverse recovery time t j = 25c 550 ns q rr reverse recovery charge i s ...
Description Full Bridge

File Size 397.99K  /  7 Page

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    FDU6N50

Fairchild Semiconductor
Part No. FDU6N50
OCR Text ... ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v...6 20 ns t r turn-on rise time -- 55 120 ns t d(off) turn-off delay time -- 25 60 ns t f turn-off fal...
Description    500V N-Channel MOSFET

File Size 797.90K  /  9 Page

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    APT36GA60B APT36GA60S

Microsemi Corporation
Part No. APT36GA60B APT36GA60S
OCR Text ...Inductive Switching (25C) VCC = 400V VGE = 15V IC = 20A RG = 104 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 20A RG = 104...6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1....
Description High Speed PT IGBT

File Size 209.40K  /  6 Page

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    Microsemi
Part No. APTCV60HM70BT3G
OCR Text ...very charge i f = 25a v r = 400v di/dt =200a/s t j = 125c 485 nc r thjc junction to case thermal resistance 1.4 c/w ...6 v/ns t rr reverse recovery time t j = 25c 580 ns q rr reverse recovery charge i s ...
Description Full Bridge PFC

File Size 667.03K  /  18 Page

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    Microsemi
Part No. APTCV60HM45RCT3G
OCR Text ... capacitance f = 1mhz, v r = 400v 100 pf r thjc junction to case thermal resistance 1.5 c/w 2. bottom switches 2.1...6 a t rr reverse recovery time 85 ns q rr reverse recovery charge 920 c i r...
Description Full Bridge Fast Rectifier Bridge

File Size 619.32K  /  13 Page

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    Microsemi
Part No. APT30GP60BDQ1G
OCR Text ...ion loss ? 100 khz operation @ 400v, 37a ? low gate charge ? 200 khz operation @ 400v, 24a ? ultrafast tail current shutoff ? ssoa r...6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jes...
Description IGBT w/ anti-parallel diode

File Size 259.16K  /  9 Page

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    Microsemi
Part No. APT30GN60BG APT30GN60SG
OCR Text ...ductive switching (25c) v cc = 400v v ge = 15v i c = 30a r g = 4.3 7 t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i...6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching e...
Description IGBT w/o anti-parallel diode

File Size 127.20K  /  6 Page

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For 400v.6 Found Datasheets File :: 13233    Search Time::1.516ms    
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