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Advanced Power Electronics
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Part No. |
AP73T03GH-HF-3 AP73T03GJ-HF-3
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OCR Text |
...0v, i d =30a - - 9 mw v gs =4.5v, i d =20a - - 16 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 42 - s i dss drain-source leakage current v ds =30v, v gs =0v -... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
99.19K /
6 Page |
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it Online |
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Advanced Power Electronics
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Part No. |
AP40T03GJ-HF-3 AP40T03GH-HF-3
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OCR Text |
... 62.5 c /w 4 c /w o rdering information ap 4 0t03gh- hf- 3 tr rohs-compliant halogen-free to-252 shipped on tape and reel ( 3000 pcs/reel) ap 4 0t03gj- hf- 3 tb rohs-compli... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
90.77K /
6 Page |
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it Online |
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Advanced Power Electronics
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Part No. |
AP2607GY-HF-3
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OCR Text |
... -4 a -20 a p total power dissipation ...3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =2... |
Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
78.01K /
5 Page |
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it Online |
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Advanced Power Electronics
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Part No. |
AP9576GJ-HF-3
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OCR Text |
... i -1 4 a drain-source voltage -60 2 0 v at t =...3 62.5 c /w 3.4 c /w o rdering information a... |
Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
95.33K /
6 Page |
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it Online |
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Advanced Power Electronics
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Part No. |
AP75T10GS-3
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OCR Text |
... - - 15 mw v g s = 4.5v, i d = 16a - - 21 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
358.35K /
6 Page |
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it Online |
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Advanced Power Electronics
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Part No. |
AP0904GH-HF-3
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OCR Text |
... a drain-source voltage 4 0 gate-source voltage 20 v parameter rating symbol value units rthj-c ...3 62.5 c /w parameter rthj-a maximum thermal resistance, junction-ambient 110 c /w... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
85.35K /
6 Page |
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it Online |
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Guangdong Kexin Industr...
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Part No. |
2N7002K-3
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OCR Text |
...notes: 1. device mounted on fr-4 pcb. note: 2. short duration test pulse used to minimize self-heating ef f ect. mark in g 702 . n-cha nne...3 f or w ar d t r ans fer a dm i ttanc e ( note.2) | y f s | v g s = 10v , i d = 200m a... |
Description |
N-Channel Enhancement MOSFET
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File Size |
1,172.30K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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