2080 pdf Datasheet P7 Full Text Search --- IC-ON-LINE

2080 Datasheet PDF File

For 2080 Found Datasheets File :: 1488 Search Time::1.187ms
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				Samsung Semiconductor Co., Ltd.
Part No.	KMM372F3200BS1 KMM372F3280BS1
OCR Text	...1720 1540 10 10 0.4 Max 2260 2080 100 2260 2080 1360 1180 30 2260 2080 10 10 0.4 Unit mA mA mA mA mA mA mA mA mA mA uA uA V V -10 -10 2.4 - ICC1* : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current ...
Description	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新，3.3
File Size	489.54K / 20 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFB211501F PTFB211501E
OCR Text	...5 30 25 20 40 35 30 25 20 15 2080 -20 -25 Efficiency IMD3 -20 -25 -30 -35 -40 Efficiency -30 -35 ACP Gain -40 -45 2200 Gain -45 2100 2120 2140 2160 2180 -50 15 2070 2090 2110 2130 2150 2170...
Description	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
File Size	349.89K / 12 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6S21100HSR3 MRF6S21100HR3
OCR Text	...IM3 -U IRL 15.4 15.2 ACPR -L 15 2080 2100 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 2120 2140 2160 2180 IM3 -L ACPR -U -42 -44 2200 -40 IM3 (dBc), ACPR (dBc) 15.6 -38 -10 -20 -30 -40 VDD = 28 Vdc Pout = 23 W (Avg.) ...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	666.08K / 15 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF5S21150HSR3 MRF5S21150HR3
OCR Text	...-25 -30 1300 mA 10 5 2060 2080 2100 2120 2140 2160 2180 2200 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 33 Watts Avg. 14 IDQ = 1900 mA G ps , POWER GAIN (dB) 13 1600 mA ...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	378.66K / 12 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72A104KA01L ATC800A330JT ATC800A2R2BT RF3931TR7 ATC800A0R7BT ATC800A100JT ATC800A1R0BT ATC800A3R3BT GRM55ER72A475KA01L RF3931PCK-411 RF3931S2 RF3931SB RF3931SQ RF3931SR RF393112
OCR Text	...-5 6 7 8 9 10 11 12 13 14 15 16 2080 2110 2140 2170 2200 input return loss (db) gain (db) frequency (mhz) small signal performance vs. frequency, pout = 30dbm (vd = 48v, idq = 130ma) gain irl fixed tuned test circuit -25 -23 - 21 -19 -17 -1...
Description	30W GaN WIDEBAND POWER AMPLIFIER
File Size	1,809.12K / 14 Page	View it Online	Download Datasheet

				EPCOS
Part No.	B39202B4234H910 B423411
OCR Text	...10.00 mhz 12 16 db 2020.00 ... 2080.00 mhz 12 17 db 2080.00 ... 2400.00 mhz 24 29 db 2400.00 ... 4500.00 mhz 30 32 db 4500.00 ... 6000.00 mhz 22 25 db 6 february 25, 2011 b4234 881.5/1960.0 mhz please read cautions and warnings and i...
Description	SAW RF filter Automotive telematics
File Size	124.23K / 10 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6S21140HR3 MRF6S21140HR310
OCR Text	.... 2200 2180 2160 2140 2120 2100 2080 15.6 15.5 -- 4 4 30 28 26 -- 3 2 -- 3 6 -- 4 0 2220 2060 irl g ps acpr im3 f, frequency (mhz) figure 4. 2--carrier w--cdma broadband performance @ p out = 60 watts avg. 2200 2180 2160 2140 2120 2100 2080...
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	824.16K / 14 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S
OCR Text	...10 -15 -20 -25 -30 6 2060 2080 f, FREQUENCY (MHz) Figure 3. 2-Carrier W-CDMA Broadband Performance 15 IMD3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 14.5 G ps , POWER GAIN (dB) 14 IDQ = 1600 mA 1400 mA 1200 mA 1000 mA 800...
Description	MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
File Size	395.61K / 12 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF5S21130HSR3 MRF5S21130HR3
OCR Text	...10 -15 -20 -25 -30 6 2060 2080 2100 2120 2140 2160 2180 2200 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 28 Watts Avg. 15 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) ...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	379.13K / 12 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MMG3005NT1
OCR Text	...3 VDC = 5 Vdc 12 1900 1960 2020 2080 2140 2200 -20 1900 1960 2020 2080 f, FREQUENCY (MHz) 2140 2200 25C TC = -40C -5 IRL, INPUT RETURN LOSS (dB) -10 TC = -40C 25C 85C -15 VDC = 5 Vdc f, FREQUENCY (MHz) Figure 16. Small -Si...
Description	Heterojunction Bipolar Transistor Technology (InGaP HBT)
File Size	250.25K / 20 Page	View it Online	Download Datasheet

For 2080 Found Datasheets File :: 1488 Search Time::1.187ms
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