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Apex Microtechnology Corporation
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| Part No. |
MP111
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| OCR Text |
...ower dissipation, internal, dc 170w input voltage +v b to -v b differential input voltage 25v temperature, pin solder, 10s 225c. temperature, junction 2 175c. temperature range, storage -40 to 105c. operating temperature, case -40 ... |
| Description |
POWER OPERATIONAL AMPLIFIER
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| File Size |
339.85K /
4 Page |
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SIEMENS AG
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| Part No. |
BAS70-07
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| OCR Text |
...ameter 0.0 ehb00042 bas 70w/bas 170w v f f 10 -1 -2 10 0 10 1 10 2 10 ma 0.5 1.0 v 1.5 t a = -40 c 25 c 85 c 150 c reverse current i r = f ( v r ) t a = parameter 0 ehb00043 v r r 10 -1 -3 10 0 10 1 10 2 10 a 10 -2 20 ... |
| Description |
Silicon Schottky Diode(肖特基硅二极
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| File Size |
76.37K /
4 Page |
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SIEMENS AG
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| Part No. |
BAS70-08S
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| OCR Text |
... = 150 c 85 c 25 c bas 70w/bas 170w forward current i f = f ( v f ) t a = parameter 0.0 ehb00042 bas 70w/bas 170w v f f 10 -1 -2 10 0 10 1 10 2 10 ma 0.5 1.0 v 1.5 t a = -40 c 25 c 85 c 150 c diode capacitance c t = f ... |
| Description |
Silicon Schottky Diode(肖特基硅二极
ARRAY OF INDEPENDENT DIODES|SOT-363
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| File Size |
80.42K /
3 Page |
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SIEMENS AG
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| Part No. |
BAS70-04 BAS70-05
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| OCR Text |
... = 25c 0.0 ehb00042 bas 70w/bas 170w v f f 10 -1 -2 10 0 10 1 10 2 10 ma 0.5 1.0 v 1.5 t a = -40 c 25 c 85 c 150 c reverse current i r = f ( v r ) t a = parameter 0 ehb00043 v r r 10 -1 -3 10 0 10 1 10 2 10 a 10 -2 20 ... |
| Description |
Silicon Schottky Diode(肖特基硅二极 硅肖特基二极管（肖特基硅二极管）
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| File Size |
96.59K /
4 Page |
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Infineon
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| Part No. |
BAS70-04S
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| OCR Text |
...ameter 0.0 ehb00042 bas 70w/bas 170w v f f 10 -1 -2 10 0 10 1 10 2 10 ma 0.5 1.0 v 1.5 t a = -40 c 25 c 85 c 150 c reverse current i r = f ( v r ) t a = parameter 0 ehb00043 v r r 10 -1 -3 10 0 10 1 10 2 10 a 10 -2 20 ... |
| Description |
Schottky Diodes - Silicon AF Schottky diode array for high-speed switching
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| File Size |
94.34K /
4 Page |
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Infineon
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| Part No. |
BAS70-06S
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| OCR Text |
...ameter 0.0 ehb00042 bas 70w/bas 170w v f f 10 -1 -2 10 0 10 1 10 2 10 ma 0.5 1.0 v 1.5 t a = -40 c 25 c 85 c 150 c reverse current i r = f ( v r ) t a = parameter 0 ehb00043 v r r 10 -1 -3 10 0 10 1 10 2 10 a 10 -2 20 ... |
| Description |
Silicon Schottky Diode Array
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| File Size |
94.17K /
4 Page |
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it Online |
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Daishinku, Corp.
DAISHINKU CORP
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| Part No. |
NPCT50-50W-50R0F NPC50-100G-50R0F NPC50-100X-50R0G NPCT50-100G-50R0J NPC75-150G-50R0G NPC50-50G-50R0G NPCT50-100G-50R0G NPCT25-50G-50R0G NPC25-50G-50R0G NPC50-100G-50R0G PPC100-200AG-50R0G PPCT250-250AG-50R0G PPC250-375AG-50R0G PPCT100-200AX-1000F NPCT25-50G-50R0F NPCT25-50W-1000G NPCT25-50W-50R0G NPCT25-50G-50R0J NPCT25-50W-1000J
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| OCR Text |
....040[1,02] 0.050[1,27] 1.2 0.30 170w 40w * ppc 250-375a 0.250[6,4] 0.375[9,53] 0.040[1,02] 0.050[1,27] 3.5 0.15 330w 150w npc 25-50 0.025[0,64] 0.050[1,27] 0.010[0,25] 0.012[0,305] |
| Description |
50 ohm RF/MICROWAVE TERMINATION
100 ohm RF/MICROWAVE TERMINATION
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| File Size |
82.06K /
1 Page |
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NXP Semiconductors N.V.
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| Part No. |
PSMN013-100PS NXPSEMICONDUCTORSN.V.-PSMN013-100PS
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| OCR Text |
...on t mb = 25 c; see figure 2 --170w t j junction temperature -55 - 175 c static characteristics r dson drain-source on-state resistance v gs =10v; i d =15a; t j = 100 c; see figure 12 -19.425m ? v gs =10v; i d =15a; t j =25c; see figu... |
| Description |
N-channel 100V 13.9m standard level MOSFET in TO220. PSMN013-100PS<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<Always Pb-free,;
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| File Size |
195.92K /
15 Page |
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it Online |
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Price and Availability
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