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IRF[International Rectifier]
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Part No. |
IRFZ44EPBF
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OCR Text |
... 25C, IS = 29A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 29A --- 177 266 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ... |
Description |
HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
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File Size |
143.86K /
8 Page |
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TriQuint Semiconductor,Inc.
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Part No. |
TGF2022-06
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OCR Text |
... 51.9 12.9 56.99 0.257 0.400 e 104.7 28.1 41.5 8.3 43.55 0.415 0.522 e 127.7 28.7 37.0 8.0 48.44 0.432 0.556 e 125.1 dbm % db w pf - effi...6mm unit phemt cell gate source source drain upc l - via = 0.0135 nh (2x) 8qlws+(07fhoo 5hihuhqfh... |
Description |
DC - 20 GHz Discrete power pHEMT
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File Size |
220.54K /
10 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
BCR2PM
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OCR Text |
...2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER DISSIPATION
ON-STATE POWER DISSI...6mm 120 SOLDER LAND : 2mm 100 CURVES APPLY 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-... |
Description |
LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
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File Size |
47.49K /
4 Page |
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TriQuint Semiconductor, Inc.
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Part No. |
TGF2022-06
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OCR Text |
... 29.6 51.9 12.9 0.4 104.5 28.1 41.5 8.3 0.525 128.9 28.7 37.0 8.0 0.562 125.7 dbm % db ...6mm unit phemt cell gate source source drain upc l - via = 0.0135 nh (2x) unit phemt cell refere... |
Description |
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File Size |
179.08K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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