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  100ns--high Datasheet PDF File

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    SGS Thomson Microelectronics
Part No. MK48Z09B100
Description 100ns; 1W; 20mA; V(dd): -0.3 to 7.0V; CMOS 8K x 8 zeropower SRAM

File Size 622.14K  /  12 Page

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    Microsemi
Part No. 1N6643USE3
Description Ultra Fast Rectifier (trr less than 100ns)

File Size 206.11K  /  5 Page

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    Microsemi
Part No. 1N5807URS 1N5807URSE3 1N5807USE3 1N5811URSE3 1N5811USE3 1N5809URS 1N5809USE3
Description Ultra Fast Rectifier (trr less than 100ns)

File Size 223.22K  /  5 Page

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    Microsemi
Part No. 1N5802URS 1N5802URSE3 1N5802USE3 1N5804URSE3 1N5804USE3
Description Ultra Fast Rectifier (trr less than 100ns)

File Size 416.50K  /  5 Page

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    A290021TL-100 A29002TV-100

AMIC Technology
Part No. A290021TL-100 A29002TV-100
Description 100ns 20mA 1uA 256K x 8bit CMOS 5.0V-only

File Size 317.63K  /  32 Page

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    EPCOS AG
KEC Holdings
Microsemi
Part No. 1N5812HCE 1N5816HCE 1N5814HCE 1N5812KCE 1N5814KCE 1N5816KCE
Description Ultra Fast Rectifier (less than 100ns) 超快速整流器(小00纳秒

File Size 90.30K  /  1 Page

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    White Electronic Designs
Part No. WS1M8V-100CC WS1M8V-100CM WS1M8V-100CMA
Description 100ns; 3.3V power supply; 2 x 512K x 8 dualithic module

File Size 139.19K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. HU20260 HU20280
Description Ultra Fast Rectifier (less than 100ns)
Ultrafast recovery Modules

File Size 123.28K  /  2 Page

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    MICROSEMI[Microsemi Corporation]
Part No. HU20020 HU20010 HU20015
Description Ultra Fast Rectifier (less than 100ns)
Ultrafast recovery Modules

File Size 122.48K  /  2 Page

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    5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 5962D9960601TUA 5962D9960601TUC 5962D9960601TUX 5962D9960602QUA 5962D996

Aeroflex Circuit Technology
Part No. 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 5962D9960601TUA 5962D9960601TUC 5962D9960601TUX 5962D9960602QUA 5962D9960602QUC 5962D9960602QUX 5962D9960602TUA 5962D9960602TUX 5962D9960602TUC 5962-9960601TUA 5962-9960602TUX 5962-9960601TUC 5962P9960601TUA 5962P9960601TUC 5962P9960601TUX UT7Q512K-UPX UT7Q512K-UWC
Description 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.

File Size 106.53K  /  16 Page

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