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0855 Datasheet PDF File

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				Diodes, Inc. Diodes Inc. DIODES[Diodes Incorporated]
Part No.	MMBD4148-7 BAS16-7 MMBD914 MMBD914-7 BAS16 MMBD4148
OCR Text	...OP VIEW SOT-23 Dim A Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.85 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1....855 1.0 1.25 1.0 50 30 25 2.0 4.0 Unit V V mA mA mA nA pF ns Test Condition IR = 100mA IF = 1.0mA IF...
Description	SURFACE MOUNT SWITCHING DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE
File Size	74.45K / 3 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	MMBD4148TW BAS16TW
OCR Text	...363 C3 C2 Dim BC Min 0.10 1.15 2.00 0.30 1.80 1.80 3/4 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 2.20 0.10 1.00 0.40 0.25 ...855 1.0 1.25 1.0 50 30 25 2.0 4.0 Unit Test Condition IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA VR =...
Description	SURFACE MOUNT FAST SWITCHING DIODE ARRAY
File Size	53.69K / 1 Page	View it Online	Download Datasheet

				Won-Top Electronics Co., Ltd. WTE[Won-Top Electronics]
Part No.	MMBD4148W-T1 MMBD4148W-T3 MMBD4148W BAS16W-T1 BAS16W-T3
OCR Text	...D E G H J K L M SOT-323 Min Max 0.30 0.40 1.15 1.35 2.00 2.20 0.65 Nominal 0.30 0.40 1.20 1.40 1.80 2.20 -- 0.10 0.90 1.10 0.25 -- 0.05 0.15...855 1.0 2.5 2.0 4.0 Unit V A pF nS Test Condition @ IF = 10mA @ IF = 50mA @ VR = 75V VR = 0V, f = 1....
Description	SURFACE MOUNT FAST SWITCHING DIODE 表面贴装快速开关二极管
File Size	43.22K / 3 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE6510179 NE6510179A NE6510179A-T1
OCR Text	...0 MHz, Pin = +25 dBm Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm * High linear gain : GL = 15 dB TYP. @...855 0.807 0.796 0.772 0.769 0.729 0.716 S21 ANG. (deg.) 92.3 92.6 91.9 91.5 91.2 90.3 92.0 90.5 92.5...
Description	1 W L-BAND POWER GaAs HJ-FET
File Size	75.45K / 8 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF10021
OCR Text	...10 IDQ = 360 mA f = 1.5 GHz 0 1 2 3 4 5 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic ...855 0.859 0.861 0.860 0.877 Ang -162. -166. -172. -176. -179. 177.7 172.2 167.8 165.2 162.8 159....
Description	30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
File Size	277.83K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BAL74W BAL74W_4
OCR Text	... 25 C; note 1 - - - - -65 - 4 1 0.5 200 +150 150 A A A mW C C see Fig.2; note 1 CONDITIONS - - - - MIN. MAX. 85 75 175 500 V V mA mA UNIT ...855 1 1.25 CONDITIONS MAX. BAL74W UNIT mV mV V V nA A A A pF ns Vfr forward recovery vol...
Description	From old datasheet system High-speed diode
File Size	57.43K / 12 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BAS16-02W BAS1602W Q62702-A1239
OCR Text	... - - 2 6 pF ns VR = 0 V, f = 20 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 , measured at IR = 1mA Test circuit for reverse recovery time D.U.T. F Oscillograph EHN00016 Pulse generator: tp = ...
Description	From old datasheet system Silicon Switching Diode Preliminary data (For high-speed switching applications)
File Size	20.20K / 3 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS16-02W BAS16 BAS16W BAS16S BAS16-03W BAS16-02V
OCR Text	... 150 -65 ... 150 C IFSM 4.5 2.5 0.5 mW Symbol VR VRM IF 250 200 200 250 200 200 250 A Value 80 85 mA Unit V 2 Dec-04-2003 BAS16... ...855 1000 1200 1250 1.75 0.1 30 50 mV V calculation of RthJA please refer to Application Not...
Description	General Purpose Diodes - Silicon Switching Diode for high-speed switching Latest Silicon Discretes - Switching Diode for high speed switching Silicon Switching Diode 硅开关二极管
File Size	514.74K / 10 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BAS16-03W BAS1603W Q62702-A1231 BAS1603WQ62702A1231
OCR Text	...nted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Mar-13-1998 1998-11-01 BAS 16-03W Electrical Chara...855 1000 1250 1 A IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 C VR = 75 V, TA...
Description	From old datasheet system Silicon Switching Diode Preliminary data (For high-speed switching applications) RES,CHIP,100PPM 12.1,1%,1/8W Three-PLL General Purpose FLASH Programmable Clock Generator
File Size	28.38K / 4 Page	View it Online	Download Datasheet

				Won-Top Electronics Co., Ltd. WTE[Won-Top Electronics]
Part No.	BAS16-T1 BAS16-T3 BAS16
OCR Text	... B C D E G H J K L M SOT-23 Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0....855 1.0 2.0 6.0 Unit V V A pF nS Test Condition @ IRS = 100A @ IF = 10mA @ VR = 75V VR = 0V, f = 1.0...
Description	RES 130R SM 1/4W F 1206C THKF 100PPM TR 表面贴装快速开关二极管 SURFACE MOUNT FAST SWITCHING DIODE 表面贴装快速开关二极管
File Size	48.47K / 3 Page	View it Online	Download Datasheet

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