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Philips
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| Part No. |
2PD1820A 2PD1820AR 2PD1820AS 2PD1820AQ
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| OCR Text |
...ote 1. Pulse test: tp 300 s; 0.02. DC current gain collector-emitter saturation voltage collector capacitance transition frequency IC = 500 mA; VCE = 10 V; note 1 IC = 300 mA; IB = 30 mA; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITI... |
| Description |
NPN general purpose transistor
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| File Size |
48.77K /
9 Page |
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it Online |
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SANKEN[Sanken electric]
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| Part No. |
2SA1216
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| OCR Text |
...5mA VCE=-4V, IC=-8A IC=-8A, IB=-0.8A VCE=-12V, IE=2A VCB=-10V, f=1MHz
External Dimensions MT-200
36.40.3 24.40.2 2-o3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3... |
| Description |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
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| File Size |
23.26K /
1 Page |
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it Online |
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WINGS[Wing Shing Computer Components]
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| Part No. |
2SA1216
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| OCR Text |
...
Test Condition IC=-10 mA IE=0 IC=-5 mA RBE= IE=-4mA IC=0 VCB=-90V IE=0 VEB=-4V IC=0 VCE=-5V IC=-1A VCE=-4V IC=-8A IC=-8A IB=-0.8A
Min -180 -180 -6
Typ
Max
Unit V V V mA mA
50 30
-0.1 -0.1 150 -2.0
V
Wing Shing Co... |
| Description |
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
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| File Size |
25.29K /
1 Page |
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it Online |
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Sanken
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| Part No. |
2SA1216
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| OCR Text |
...5mA VCE=-4V, IC=-8A IC=-8A, IB=-0.8A VCE=-12V, IE=2A VCB=-10V, f=1MHz
External Dimensions MT-200
36.40.3 24.40.2 2-o3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3... |
| Description |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
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| File Size |
28.00K /
2 Page |
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it Online |
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NEC Corp.
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| Part No. |
2SA1744 2SA1744M 2SA1744L
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| OCR Text |
...CE = -2 V, IC = -3 A) VCE(sat) 0.3 V (IC = -8 A, IB = -0.4 A) * Full-mold package that does not require an insulating board or bushing
Electrode Connection 1. Base 2. Collector 3. Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Paramet... |
| Description |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 15A I(C) | TO-220VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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| File Size |
141.29K /
6 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
2SA1812 2SA1776 2SA1727 A1776
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| OCR Text |
0.5A)
2SA1812 / 2SA1727 / 2SA1776
Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (sa... |
| Description |
High-voltage Switching Transistor (-400V, -0.5A)
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| File Size |
197.96K /
4 Page |
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it Online |
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Rohm CO.,LTD.
ROHM[Rohm]
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| Part No. |
2SB1695K
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| OCR Text |
...dimensions (Units : mm)
(1)
0.4
!Features 1) A collector current is large. 2) VCE(sat) -370mV At IC =- 1A / IB = -50mA
ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346
(3)
1.6 2.8
0.15
0.3Min.
0~0.1
Each lead has same dimen... |
| Description |
MS (MIL-C-5015) SERIES 97 3106B SPLIT SHELL STRAIGHT PLUGS, STRAIGHT BODY STYLE, SOLDER TERMINATION, 20 SHELL SIZE, 20-11 INSERT ARRANGEMENT, PLUG GENDER, 13 CONTACTS
Low frequency amplifier
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| File Size |
72.31K /
3 Page |
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it Online |
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SANYO
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| Part No. |
2SC2909
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| OCR Text |
...:mm 2003B
[2SA1207/2SC2909]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3
5.0
( ) : 2SA1207
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-... |
| Description |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications
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| File Size |
50.00K /
5 Page |
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it Online |
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Price and Availability
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