-30v pdf Datasheet P7 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : X4753 1N5255B M168F MA3051 FL470 2SD745 F20NM50 LXT310
	Product Description
	Full Text Search

-30v Datasheet PDF File

For -30v Found Datasheets File :: 33939 Search Time::1.844ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	SPVP120100 SPVP SPVP110100
OCR Text	...Rating max. Resistive load 0.1A 30V DC 1 max. 0.1A 12V DC 500m max. 0.1A 30V DC 1 max. 2 max. 10 to 60 50mA 20V DC 2 max. 500m max. 1mA 5V DC SPVE SPPW8 SPVM SPVR SPVP SPVN SPVG SPVL SSCM Power Push 2 max. ...
Description	Low-profile One-way Detector Switch
File Size	83.49K / 5 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	SPVM210200 SPVM SPVM110100 SPVM110200 SPVM210100
OCR Text	...Rating max. Resistive load 0.1A 30V DC 1 max. 0.1A 12V DC 500m max. 0.1A 30V DC 1 max. 2 max. 10 to 60 50mA 20V DC 2 max. 500m max. 1mA 5V DC SPVE SPPW8 SPVM SPVR SPVP SPVN SPVG SPVL SSCM Power Push 2 max. ...
Description	Compact Two-way Operation Type Detector Switch
File Size	99.41K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPU09P06PL SPD09P06PL
OCR Text	...=0V, VDS =-25V, f=1MHz VDD =-30v, VGS =-4.5V, ID =-5.4, RG =6 VDD =-30v, VGS =-4.5V, ID =-5.4A, RG =6 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse ...
Description	Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.25 SIPMOS Power-Transistor From old datasheet system
File Size	228.11K / 8 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
Part No.	UGF12JT UG12HT UG12JT UGB12HT UGB12JT UGF12HT
OCR Text	... IF = 1.0A, di/dt = 50A/s, VR = 30V, Irr = 0.1 IRM Typical softness factor (tb/ta) IF = 12A, di/dt = 240A/s, VR = 400V, Irr = 0.1 IRM Maximum reverse recovery current at IF = 12A, di/dt = 96A/s, VR = 400V, TC = 125C Peak forward recovery ti...
Description	Ultrafast Rectifiers 超高速整流器 Ultrafast Rectifiers, Forward Current 12A, Reverse Recovery Time 30ns From old datasheet system
File Size	43.42K / 3 Page	View it Online	Download Datasheet

				SYNC-POWER[SYNC POWER Crop.]
Part No.	SPP7401S32RG SPP7401
OCR Text	...D Display inverter FEATURES -30v/-2.8A,RDS(ON)=115m@VGS=- 10V -30v/-2.5A,RDS(ON)=125m@VGS=-4.5V -30v/-1.5A,RDS(ON)=170m@VGS=-2.5V -30v/-1.0A,RDS(ON)=240m@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-...
Description	P-Channel Enhancement Mode MOSFET
File Size	197.11K / 8 Page	View it Online	Download Datasheet

				Murata Manufacturing Co., Ltd. SYNC-POWER[SYNC POWER Crop.]
Part No.	SPP6507S26RG SPP6507
OCR Text	...inverter FEATURES P-Channel -30v/-2.8A,RDS(ON)=105m@VGS=- 10V -30v/-2.5A,RDS(ON)=115m@VGS=-4.5V -30v/-1.5A,RDS(ON)=150m@VGS=-2.5V -30v/-1.0A,RDS(ON)=215m@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-...
Description	Dual P-Channel Enhancement Mode MOSFET 双P沟道增强型MOS
File Size	197.81K / 8 Page	View it Online	Download Datasheet

				Amphenol, Corp. SYNC-POWER[SYNC POWER Crop.]
Part No.	SPP4953S8TG SPP4953 SPP4953S8RG
OCR Text	...high-side switching . FEATURES -30v/-5.0A,RDS(ON)= 60m@VGS=- 10V -30v/-4.5A,RDS(ON)= 80m@VGS=- 6V -30v/-3.7A,RDS(ON)= 90m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current c...
Description	P-Channel Enhancement Mode MOSFET P沟道增强型MOS
File Size	213.45K / 8 Page	View it Online	Download Datasheet

				SYNC-POWER[SYNC POWER Crop.]
Part No.	SPP3401S23RG SPP3401
OCR Text	...urface mount package. FEATURES -30v/-4.0A,RDS(ON)= 55m@VGS=- 10V -30v/-3.2A,RDS(ON)= 65m@VGS=-4.5V -30v/-1.2A,RDS(ON)= 75m@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current ...
Description	P-Channel Enhancement Mode MOSFET
File Size	195.27K / 8 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP9579GM-HF AP9579GM-HF14
OCR Text	... q gs gate-source charge v ds =-30v - 8 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 18 - nc t d(on) turn-on delay time v ds =-30v - 12 - ns t r rise time i d =-1a - 9 - ns t d(off) turn-off delay time r g =3.3 -77- ns t f fall tim...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	56.22K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMDPB70EN
OCR Text	...drain-source voltage t j =25c --30v v gs gate-source voltage -20 - 20 v i d drain current v gs =10v; t amb = 25 c; t 5 s [1] --4.5a static characteristics (per transistor) r dson drain-source on-state resistance v gs =10v; i d =3.5a; t ...
Description	MOSFET
File Size	309.80K / 15 Page	View it Online	Download Datasheet

For -30v Found Datasheets File :: 33939 Search Time::1.844ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |