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  w 3.5mm Datasheet PDF File

For w 3.5mm Found Datasheets File :: 21866    Search Time::2.203ms    
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    SPD18P06P SPU18P06P

INFINEON[Infineon Technologies AG]
Part No. SPD18P06P SPU18P06P
OCR Text ...(on) ID -60 0.13 -18.6 V w * * * * A Type SPD18P06P SPU18P06P Package P-TO252 P-TO251 Ordering Code Q67040-S4189 Q67040-S4192 Pin 1 G PIN 2/4 D PIN 3 S Maximum Ratings,at T j = 25 C, unless otherwise speci...
Description SIPMOS Power-Transistor

File Size 116.51K  /  9 Page

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    Z1150 Z1160 1N4734 1N4728 1N4740 1N4731 1N4730 1N4729 Z1200 1N4732 1N4733 1N4735 1N4736 1N4737 1N4738 1N4739 1N4741 1N47

Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
Part No. Z1150 Z1160 1N4734 1N4728 1N4740 1N4731 1N4730 1N4729 Z1200 1N4732 1N4733 1N4735 1N4736 1N4737 1N4738 1N4739 1N4741 1N4742 1N4743 1N4744 1N4745 1N4746 1N4747 1N4748 1N4749 1N4750 1N4751 1N4752 1N4753 1N4754 1N4755 1N4756 1N4757 1N4758 1N4759 1N4760 1N4761 1N4762 1N4763 1N4764 Z1110 Z1120 Z1130 Z1180
OCR Text ... to + 175 Unit watt Volts K/w C C Note : (1) TL = Lead temperature at 3/8 " (9.5mm) from body (2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. Fig. 1 POwER TEMPERATURE DERATING CURVE 1.2...
Description Test Leads for 875B, 878, 878A, 879, 890, & 890B (Sheathed) RoHS Compliant: NA
PTDA 1,5/11-3,5
Computers, Printers Peripherals;
SILICON ZENER DIODES

File Size 27.29K  /  2 Page

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    Z1380 Z1270 Z1300 Z1330 Z1110 Z1240 Z1400 Z1120 Z1130 Z1150 Z1160 Z1180 Z1200 Z1250 Z1380A

EIC[EIC discrete Semiconductors]
Electronics Industry Public Company Limited
EIC discrete Semiconduc...
Part No. Z1380 Z1270 Z1300 Z1330 Z1110 Z1240 Z1400 Z1120 Z1130 Z1150 Z1160 Z1180 Z1200 Z1250 Z1380A
OCR Text ... to + 175 Unit watt Volts K/w C C (1) TL = Lead temperature at 3/8 " (9.5mm) from body (2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. ELECTRICAL CHARACTERISTICS Rating at 25 C ambi...
Description Test, Component; Color:Blue; Inductance Measuring Range:1 mH to 10,000 H; Number of Batteries:1; Resistance Measuring Range:10 Ohm to 10 MOhm; Accuracy:0.001; Battery Size Code:9V; Display Technology:LED
SILICON ZENER DIODES
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 380 V, 1 w, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41

File Size 22.13K  /  1 Page

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    5KP15CA 5KP54CA 5KP40CA 5KP14CA 5KP78CA 5KP90CA 5KP100CA 5KP10CA 5KP110CA 5KP11CA 5KP120CA 5KP12CA 5KP13CA 5KP150CA 5KP1

http://
DIODES[Diodes Incorporated]
Part No. 5KP15CA 5KP54CA 5KP40CA 5KP14CA 5KP78CA 5KP90CA 5KP100CA 5KP10CA 5KP110CA 5KP11CA 5KP120CA 5KP12CA 5KP13CA 5KP150CA 5KP16CA 5KP17CA 5KP180CA 5KP18CA 5KP20CA 5KP22CA 5KP240CA 5KP24CA 5KP26CA 5KP28CA 5KP30CA 5KP33CA 5KP36CA 5KP43CA 5KP45CA 5KP48CA 5KP50CA 5KP50CAS 5KP51CA 5KP58CA 5KP60CA 5KP64CA 5KP65CA 5KP70CA 5KP75CA 5KP80CA 5KP85CA
OCR Text ...fied Symbol PPK Value 5000 Unit w Characteristic Peak Pulse Power Dissipation (Non repetitive current pulse derated above TA = 25C) ( Not...3) Steady State Power Dissipation at TL = 75C, Lead Lengths @ 9.5mm(Note 1) Instantaneous Forward Vo...
Description    5000w TRANSIENT VOLTAGE SUPPRESSOR

File Size 65.66K  /  3 Page

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    BAT14-03 BAT14-03W Q62702-A1103 BAT1403W

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAT14-03 BAT14-03w Q62702-A1103 BAT1403w
OCR Text ... + 125 C mw RthJA RthJS K/w Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semic...3.0 3.5 4.0 V VR 5.0 Semiconductor Group 2 Mar-01-1996 BAT 14-03w Forward curre...
Description Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system

File Size 36.61K  /  4 Page

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    BC847PN Q62702-C2374 BC847PNQ62702C2374 Q62702-C1504 Q62702-C1692 Q62702-C1689

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BC847PN Q62702-C2374 BC847PNQ62702C2374 Q62702-C1504 Q62702-C1692 Q62702-C1689
OCR Text ...tg RthJA RthJS mA mw C K/w 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group 1 May-12-1998 B...3 May-12-1998 BC 847PN Total power dissipation Ptot = f (TA *;TS) * Package mounted on epox...
Description PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
TRANSISTOR SOT363
NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
From old datasheet system

File Size 228.72K  /  6 Page

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    BC847S Q62702-C2372 BC847SQ62702C2372

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BC847S Q62702-C2372 BC847SQ62702C2372
OCR Text ... RthJA RthJS 275 140 K/w 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group 1 May-12-1998 B...3 May-12-1998 BC 847S Total power dissipation Ptot = f (TA *;TS) * Package mounted on epoxy...
Description TRANSISTOR SOT363
NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)
From old datasheet system

File Size 154.87K  /  6 Page

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    BTS611L1E3230 Q67060-S6302-A4 BTS611L1 BTS611L1E3128A Q67060-S6302-A2 Q67060-S6302-A3

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BTS611L1E3230 Q67060-S6302-A4 BTS611L1 BTS611L1E3128A Q67060-S6302-A2 Q67060-S6302-A3
OCR Text .... +16 2.0 5.0 Unit V V V A C w mJ VLoad dump4) IL Tj Tstg Ptot EAS Electrostatic discharge capability (ESD) (Human Body Model) Inpu...3) 4) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and statu...
Description High Speed CMOS Logic Dual 4-Stage Static Shift Registers 16-PDIP -55 to 125
High Speed CMOS Logic Dual 4-Stage Static Shift Registers 16-SOIC -55 to 125
From old datasheet system
Smart Two Channel Highside Power Switch

File Size 191.50K  /  14 Page

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    BTS612N1E3230 BTS612N1 BTS612-N1 BTS612N1E323

INFINEON[Infineon Technologies AG]
Part No. BTS612N1E3230 BTS612N1 BTS612-N1 BTS612N1E323
OCR Text .... +16 2.0 5.0 Unit V V V A C w mJ Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input...3) 4) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and statu...
Description Smart Two Channel Highside Power Switch 智能双通道阻抗高侧电源开
Smart High Side Switches - 5,0-34V, 2x200Ω, Limit(scr) 4A TO220

File Size 305.53K  /  15 Page

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    BTS621L1E3230 BTS621L1 BTS621L1E3128A BTS621-L1 BTS621L1E323

INFINEON[Infineon Technologies AG]
Part No. BTS621L1E3230 BTS621L1 BTS621L1E3128A BTS621-L1 BTS621L1E323
OCR Text .... +16 2.0 5.0 Unit V V V A C w mJ Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input...3) 4) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and statu...
Description Smart Two Channel Highside Power Switch
Smart High Side Switches - 2x100m5,0-34V Limit(scr) 8A TO220

File Size 334.38K  /  15 Page

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For w 3.5mm Found Datasheets File :: 21866    Search Time::2.203ms    
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