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  unilateral Datasheet PDF File

For unilateral Found Datasheets File :: 402    Search Time::2.266ms    
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    BFR92AW

NXP Semiconductors
Part No. BFR92AW
OCR Text ...ce transition frequency maximum unilateral power gain up to Ts = 93 C; note 1 IC = 15 mA; VCE = 10 V IC = 0; VCE = 10 V; f = 1 MHz; Tamb = 25 C IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 15 mA; V...
Description    NPN 5 GHz wideband transistor

File Size 265.64K  /  13 Page

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    BFR92 BFR92_CNV_2

Philips Semiconductors
Part No. BFR92 BFR92_CNV_2
OCR Text ...cy feedback capacitance maximum unilateral power gain noise figure output voltage up to Ts = 95 C; note 1 IC = 14 mA; VCE = 10 V; f = 500 MHz; Tj = 25 C IC = 2 mA; VCE = 10 V; f = 1 MHz IC = 14 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = ...
Description From old datasheet system
NPN 5 GHz wideband transistor

File Size 59.17K  /  10 Page

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    MOTOROLA[Motorola, Inc]
Part No. MRF577T1
OCR Text ..., IC = 5.0 mA) Figure 1 Maximum unilateral Gain (VCE = 6.0 Vdc, IC = 40 mA, f = 1000 MHz) Insertion Gain (VCE = 6.0 Vdc, IC = 40 mA, f = 1000 MHz) Noise Resistance (VCE = 6.0 Vdc, IC = 5.0 mA, f = 1000 MHz) 500 MHz 1.0 GHz 500 MHz 1.0 GHz N...
Description The RF Small Signal Line NPN Silicon High-Frequency Transistor

File Size 109.49K  /  12 Page

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    Philips
Part No. BFG198
OCR Text ...in transition frequency maximum unilateral power gain up to Ts = 135 C (note 1) IC = 50 mA; VCE = 5 V; Tj = 25 C IC = 50 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 800 MH...
Description NPN 8 GHz wideband transistor

File Size 74.20K  /  12 Page

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    BFQ591

Philips Semiconductors
Part No. BFQ591
OCR Text ...ce transition frequency maximum unilateral power gain insertion power gain Ts 90 C; note 1 IC = 70 mA; VCE = 8 V IC = 0; VCB = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C IC = 70 mA; V...
Description NPN 7 GHz wideband transistor

File Size 53.84K  /  11 Page

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    BFR93AR BFR93AR-2015

NXP Semiconductors
Quanzhou Jinmei Electro...
Part No. BFR93AR BFR93AR-2015
OCR Text ...apacitance transition frequency unilateral power gain Symbol Parameter collector-emitter voltage open base NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description ...
Description NPN 6 GHz wideband transistor

File Size 81.07K  /  13 Page

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    BFG35

Philips Semiconductors
Part No. BFG35
OCR Text ...dB dB mV UNIT V mA W maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C Vo output voltage IC = 100 mA; VCE = 10 V; dim = -60 dB; RL = 75 ; f(p+q-r) =...
Description NPN 4 GHz wideband transistor

File Size 87.14K  /  16 Page

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