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  turn-on Datasheet PDF File

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4822A
OCR Text ... capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =15v, r =1.8 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =8a gate source charge gate drain charg...
Description 30V Dual N-channel MOSFET

File Size 379.99K  /  6 Page

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    AO482211

Alpha & Omega Semiconductors
Part No. AO482211
OCR Text ... capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =15v, r =1.8 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =8a gate source charge gate drain charg...
Description 30V Dual N-channel MOSFET

File Size 296.46K  /  6 Page

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    AO4821 AO482110

Alpha & Omega Semiconductors
Part No. AO4821 AO482110
OCR Text ...ance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-4.5v, v ds =-6v, i d =-9a gate source charge gate drain charge b...on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-6v, r l =0....
Description 12V Dual P-Channel MOSFET

File Size 258.22K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4821
OCR Text ...ance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-4.5v, v ds =-6v, i d =-9a gate source charge gate drain charge b...on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-6v, r l =0....
Description 12V Dual P-Channel MOSFET

File Size 409.04K  /  5 Page

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    SGS Thomson Microelectronics
Part No. ACST4-7SB
OCR Text ...evice to absorb the induc- tive turn-off energy and withstand line transients such as those described in the iec61000-4-5 stan- dards. descr...on-state current full cycle sine wave 50 to 60 hz dpak tc = 110 c 4 a to-220fpab tc = 100 c i tsm no...
Description AC POWER SWITCH

File Size 96.18K  /  9 Page

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    87075C-006 87075C-012

Agilent(Hewlett-Packard)
Part No. 87075C-006 87075C-012
OCR Text ...p for at least 30 minutes after turn-on; measurements are made at an environmental temperature of 25 c 5 c and within 1 c of the last valid test set cal. 2. these uncertainty curves only include the effects of the test port(s) within t...
Description 75-Ohm Multiport Test Sets

File Size 619.01K  /  20 Page

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    New Jersey Semiconductors
New Jersey Semi-Conduct...
Part No. IRFZ46
OCR Text ...gate-to-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance input capacitance output capacitance reverse transfer capacitance ? ? ? ? ? -- ^j ? ? ? ? ? ? ? ...
Description Trans MOSFET N-CH 50V 50A 3-Pin(3 Tab) TO-220AB
HEXFET Power MOSFET

File Size 106.26K  /  2 Page

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    Maxwell Technologies, Inc
Part No. 306RPFX
OCR Text ... = +25c 9 -- 130 450 na enable turn-on time t on(en) v inh = 2.4v v inl = 0v v no1 = 5v figure 11 t a = +25c 9 -- -- 600 ns enable turn-off time t off(en) v inh = 2.4v v inl = 0v v no1 = 5v figure 11 t a = +25c 9 -- -- 300 ns charg...
Description OSCILLATOR 3.6864 MHZ 16通道CMOS模拟多路复用

File Size 270.23K  /  15 Page

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    STGW60H65F

STMicroelectronics
Part No. STGW60H65F
OCR Text ...aximum junction temperature and turn-off within rbsoa pulsed collector current 240 a v ge gate-emitter voltage 20 v p tot total dissipation...on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) (1) t r (1) (...
Description 650 V field stop trench gate IGBT

File Size 1,512.11K  /  14 Page

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