t-39-15 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 55N50F E1UPA RLPBF UPD780 10130 ADXL3 11002 74AHC1
	Product Description
	Full Text Search

t-39-15 Datasheet PDF File

For t-39-15 Found Datasheets File :: 55199 Search Time::2.797ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				IRF[International Rectifier]
Part No.	IRF3000
OCR Text	... Current ( A) 2.0 10.0 T J = 150C RDS(on) , Drain-to-Source On Resistance (Normalized) 1.5 1.0 T J = 25C 1.0 0.5 0.1 5.0 6.0 VDS = 50V 20s PULSE WIDTH 7.0 8.0 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80...
Description	300V Single N-Channel HEXFET Power MOSFET in a SO-8 package SMPS MOSFET
File Size	119.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	...Y PACKAGE 100 VGS RG D.U.T. + VDD ID , Drain Current (A) - 80 10V Pulse Width 1 s Duty Factor 0.1 % 60 Fig 10a....39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE ...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	...le applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C...39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE ...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	... = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear ...39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	... 1000 1.5 100 10 T J = 150C RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () ID =...39.60000 i (sec) 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= i/Ri Ci i/Ri t2 No...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...le applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C...39 63 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	... -4.5 V 2 0 s P U LS E W ID TH T c = 2 5C J A 0.1 1 10 100 -4 .5 V 20 s P U L S E W ID T H TC = 17 5C J 0.1 1 10 1 1 A 10...39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...le pulse P D tp D = tp/T T 1E-04 1E-03 1E-02 1E-01 1E+00 0.01 1E-06 1E-05 Pulse width, tp (s) Fig.1. Normalised powe...39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 ...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	...ings Parameter N-Channel ID @ T C = 25C ID @ T C = 70C IDM PD @T C = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, V GS @ 10V Continuou...39 60 4.0 -- 6.0 -- 300 -- 280 -- 260 -- 250 -- 62 -- 86 -- Units V V/C V(BR)DSS/TJ Breakdown V...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D1
OCR Text	... on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular Devices are 100% tested to these parameters. 2 www.irf.com ...39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Te...
Description	MOSFET / SCHOTTKY DIODE
File Size	162.75K / 8 Page	View it Online	Download Datasheet

For t-39-15 Found Datasheets File :: 55199 Search Time::2.797ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |