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For silicon-avalanche Found Datasheets File :: 10381 Search Time::2.094ms
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				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530N
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating ...
Description	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating ...
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1S9540SM FN2282
OCR Text	... are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of thes...
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	...This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9952
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction a...
Description	Power MOSFET(Vdss= -30V)
File Size	128.20K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9953
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction an...
Description	Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)
File Size	98.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9956
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction ...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating ...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

For silicon-avalanche Found Datasheets File :: 10381 Search Time::2.094ms
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