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  samsungs Datasheet PDF File

For samsungs Found Datasheets File :: 418    Search Time::0.812ms    
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    K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X401

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X4016C3F-TB70 K6X4016C3F-TF70
OCR Text ...6C3F families are fabricated by samsungs advanced full CMOS process technology. The families support various operating temperature range and small package types for user flexibility of system design. The families also support low data reten...
Description 256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器

File Size 129.39K  /  9 Page

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    K6X8008C2B-TQ55 DSK6X8008C2B K6X8008C2B K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70 K6X8008C2

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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K6X8008C2B-TQ55 DSK6X8008C2B K6X8008C2B K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70 K6X8008C2B-TF55 K6X8008C2B-TF70 K6X8008C2B-TQ70 DS_K6X8008C2B
OCR Text ...8C2B families are fabricated by samsungs advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery...
Description 1Mx8 bit Low Power and Low Voltage CMOS Static RAM 1Mx8位低功耗和低电压的CMOS静态RAM

File Size 129.87K  /  9 Page

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    K3S7V2000M-TC15 K3S7V2000M-TC20 K3S7V2000M-TC30 K3S7V2000M-TC K3S7V2000M-TC10 K3S7V2000M-TC12

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K3S7V2000M-TC15 K3S7V2000M-TC20 K3S7V2000M-TC30 K3S7V2000M-TC K3S7V2000M-TC10 K3S7V2000M-TC12
OCR Text ...rogrammable ROM fabricated with samsungs high performance CMOS process technology and is organized either as 4,194,304 x16bit(word mode) or as 2,097,152 x32bit(double word mode) depending on polarity of WORD pin.(see pin function descriptio...
Description 2M x 32 Synchronous MASKROM Data Sheet
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM

File Size 1,077.97K  /  27 Page

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    K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S161622E-TC70 K4S161622E DSK4S161622E K4S161622E-TC10 K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC80 DS_K4S161622E
OCR Text ...rds by 16 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, prog...
Description 1M x 16 SDRAM

File Size 671.65K  /  42 Page

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    K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC80 K4S161622H K4S161622H-TC600

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4S161622H-TC80 K4S161622H K4S161622H-TC600
OCR Text ...rds by 16 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/ O transactions are possible on every clock cycle. Range of operating frequencies, pro...
Description 16Mb H-die SDRAM Specification

File Size 106.31K  /  11 Page

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    K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50 K4S643232H-TC55 K4S643232H-TC60 K4S643232H-TL50 K4S643232H-TL55 K4S643232H-TL60 K4S643232H-TC/L50 K4S643232H-TC/L55 K4S643232H-TC/L60 K4S643232H-TC/L70
OCR Text ...rds by 32 bits, fabricated with samsungs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, pro...
Description 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
   64Mb H-die (x32) SDRAM Specification

File Size 115.81K  /  12 Page

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    K6R4016C1C-C K6R4016C1C-C10 K6R4016C1C-C12 K6R4016C1C-C15 K6R4016C1C-E K6R4016C1C-E10 K6R4016C1CE12 K6R4016C1CE15 K6R401

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R4016C1C-C K6R4016C1C-C10 K6R4016C1C-C12 K6R4016C1C-C15 K6R4016C1C-E K6R4016C1C-E10 K6R4016C1CE12 K6R4016C1CE15 K6R4016C1C-I K6R4016C1C-I10 K6R4016C1C-I12 K6R4016C1C-I15
OCR Text ... The device is fabricated using samsungs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4016C1C is packaged in a 400mil 44-...
Description 256Kx16 Bit High Speed Static RAM(5V Operating).

File Size 183.08K  /  11 Page

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    K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D K6R4004C1D-JC K6R4004V1D K6R4004V1D-JKCI K6R4008C1D K6R4008C1D-JC K6R4

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D K6R4004C1D-JC K6R4004V1D K6R4004V1D-JKCI K6R4008C1D K6R4008C1D-JC K6R4008V1D-JC K6R4016V1D K6R4008V1D
OCR Text ... The device is fabricated using samsungs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4004V1D is packaged in a 400 mil 32...
Description 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM3.3V的)。在商用和工业温度范围运
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM.3V的)。在商用和工业温度范围运
861 SOLID STATE RELAYS RoHS Compliant: Yes

File Size 216.37K  /  9 Page

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    K6R4016V1 K6R4016V1D K64004C1D

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R4016V1 K6R4016V1D K64004C1D
OCR Text ... The device is fabricated using samsungs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4004C1D is packaged in a 400 mil 32...
Description 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

File Size 175.72K  /  9 Page

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    KM736V989 KM718V089

Samsung Electronic
Samsung semiconductor
Part No. KM736V989 KM718V089
OCR Text ... KM718V089 are fabricated using samsungs high performance CMOS technology and is available in a 100pin TQFP and 119BGA package. Multiple power and ground pins are utilized to minimize ground bounce. FAST ACCESS TIMES PARAMETER Cycle Tim...
Description 512Kx36 & 1Mx18 Synchronous SRAM

File Size 534.43K  /  20 Page

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For samsungs Found Datasheets File :: 418    Search Time::0.812ms    
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