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  s-igbt Datasheet PDF File

For s-igbt Found Datasheets File :: 10449    Search Time::1ms    
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Part No. MBM150GR12A
OCR Text s ili con n-channel igbt mbm150gr12a pde-m150g r12a-0 [rated 1 50a /1200v , dual-pack type] f e a t u r e s o u t l i n e d r a w i n g unit in mm w e ight ?f 23 0g 6 30 7 12 35 40 0.8 2- 5.6 2...
Description 150 A, 1200 V, N-CHANNEL IGBT

File Size 76.51K  /  4 Page

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    VISHAY INTERTECHNOLOGY INC
Part No. GB50NA120UX
OCR Text ...r i f = 50 a, di f /dt = 200 a/s, v r = 200 v - 129 161 ns diode peak reverse current i rr -1114a diode recovery charge q rr - 700 1046 nc...igbt sot-227 (ultrafast igbt), 50 a vishay high power products fig. 1 - maximum dc igbt collector ...
Description 84 A, 1200 V, N-CHANNEL IGBT

File Size 150.59K  /  9 Page

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Part No. IRGP4065DPBF
OCR Text ...ard transconductance ??? 26 ??? s q g total gate charge ??? 62 ??? nc q g c gate-to-collector charge ??? 20 ??? t d(on) turn-on delay time ? 30 ? i c = 25a, v cc = 180v t r rise time ? 26 ? ns r g = 10 ? , l=200h, l s = 150nh...
Description 70 A, N-CHANNEL IGBT, TO-247AC

File Size 346.77K  /  8 Page

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    IHW20N65R5

Infineon Technologies AG
Part No. IHW20N65R5
OCR Text ... =20v, i c =20.0a - 60.0 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified...igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 23 - ns rise time t r - 16 - ns tu...
Description high power thyristor diode

File Size 2,024.06K  /  15 Page

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    IHW20N135R3

Infineon Technologies AG
Part No. IHW20N135R3
OCR Text ... =20v, i c =20.0a - 14.8 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified...igbtcharacteristic,at t vj =25c turn-off delay time t d(off) - 335 - ns fall time t f - 50 - ns...
Description high power thyristor diode

File Size 2,205.02K  /  15 Page

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    FZ1200R45HL3

Infineon Technologies AG
Part No. FZ1200R45HL3
OCR Text ...in. typ. max. kollektor-emitter-s?ttigungsspannung collector-emittersaturationvoltage i c = 1200 a, v ge = 15 v i c = 1200 a, v ge = 1...igbt/perigbt r thjc 8,20 k/kw w?rmewiderstand,geh?usebiskhlk?rper thermalresistance,caseto...
Description ESD / Transient Protection Diode for Near Field Communication (NFC)

File Size 581.82K  /  9 Page

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    FZ1200R17HE4

Infineon Technologies AG
Part No. FZ1200R17HE4
OCR Text ...in. typ. max. kollektor-emitter-s?ttigungsspannung collector-emittersaturationvoltage i c = 1200 a, v ge = 15 v i c = 1200 a, v ge = 1...igbt/perigbt r thjc 19,0 k/kw w?rmewiderstand,geh?usebiskhlk?rper thermalresistance,case...
Description ESD / Transient Protection Diode for Near Field Communication (NFC)

File Size 608.99K  /  9 Page

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    FZ1200R12KL4C

INFINEON TECHNOLOGIES AG
Part No. FZ1200R12KL4C
OCR Text ...+-;-c/*- orh 7; s n? &g * q;'()*+,;-./*+-;-c/*- trh a;...igbt-module igbt-modules ...
Description IGBT-Wechselrichter / IGBT-inverter

File Size 248.96K  /  8 Page

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    MGP7N60ED MGP7N60ED_D ON1877 ON1876

ONSEMI[ON Semiconductor]
Part No. MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text ...e. Repetitive rating. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely...IGBT Device Motorola, Inc. 1998 Data 1 MGP7N60ED ELECTRICAL CHARACTERISTICS (TJ = 25C unle...
Description Insulated Gate Bipolar Transistor withr Anti-Parallel Diode
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system

File Size 140.16K  /  6 Page

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