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    ST Microelectronics
Part No. ST7FLITE1XXX ST7LITE1
OCR Text ...h) program memory with read-out pro- tection, in-circuit programming and in-appli- cation programming (icp and iap). 10k write/ erase cycles guaranteed, data retention: 20 years at 55c. ? 256 bytes ram ? 128 bytes data e 2 prom with read-ou...
Description 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY

File Size 1,005.71K  /  131 Page

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    ST Microelectronics
Part No. L9822N
OCR Text ...ctions for fault indication and pro- tection. the nominal load current for these outputs is 500ma. the outputs also have on board clamps set at about 36v for recirculation of inductive load current. pin description electrical characteristi...
Description OCTAL SERIAL SOLENOID DRIVER

File Size 775.37K  /  9 Page

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    MX29LV033MTTI-90G

Macronix International
Part No. MX29LV033MTTI-90G
OCR Text ...oup protect function to prevent pro- gram or erase operation in the protected sector group - provides chip unprotect function to allow code ...tection is proved for stresses up to 100 milliamperes on address and data pin from -1v to vcc + 1v. ...
Description 32M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY

File Size 395.42K  /  66 Page

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    Macronix
Part No. MX29LV065
OCR Text ...oup protect function to prevent pro gram or erase operation in the protected sector group - provides chip unprotected function to allow code...tection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. aut...
Description 64M-Bit CMOS Flash Memory

File Size 513.82K  /  64 Page

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    ST Microelectronics
Part No. ST7FSCR1E4 ST7SCR1E4
OCR Text ... program memory with read/write pro- tection C hdflash in-circuit and in-application pro- gramming C up to 768 bytes of ram including up to 128 bytes stack and 256 bytes usb buffer n clock, reset and supply management C low voltage reset C...
Description 8-BIT LOW-POWER, FULL-SPEED USB MCU WITH 16K FLASH, 768 RAM, SMARTCARD I/F, TIMER (DATA BRIEFING)

File Size 212.92K  /  10 Page

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    SST25VF020B SST25VF020B11

Microchip Technology
Part No. SST25VF020B SST25VF020B11
OCR Text ...chip programming time over byte-pro- gram operations ? end-of-write detection ? software polling the busy bit in status register ? busy stat...tection. during an internal erase or program operation, the status register may be read only to dete...
Description 2 Mbit SPI Serial Flash

File Size 3,781.38K  /  35 Page

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    Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
Part No. MX29LV400CBXHI-70Q MX29LV400CTXHI-70Q 29LV400C-90 29LV400C-70 29LV400C-55R MX29LV400CBMI-55R MX29LV400CTMI-55Q MX29LV400CTMI-55R MX29LV400CBMI-55Q MX29LV400CBXHI-55Q MX29LV400CTXHI-55Q MX29LV400CBMC-55Q MX29LV400CTMC-55Q MX29LV400CBXBC-55R MX29LV400CBMC-55R MX29LV400CBXBI-55Q MX29LV400CBTI-55Q MX29LV400CBTC-55Q MX29LV400CBXBI-55R MX29LV400CBTI-55R MX29LV400CBTC-55R MX29LV400CBMC-90 MX29LV400CBMI-90 MX29LV400CBMC-70 MX29LV400CBTC-90G MX29LV400CBTC-70G MX29LV400CBMI-70 MX29LV400CBMI-70G MX29LV400CBMC-90G MX29LV400CTMC-55R MX29LV400CTTC-55Q MX29LV400CTTI-55R MX29LV400CTXEI-55Q MX29LV400CTMC-90
OCR Text ...tary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. 2 p/n:pm1155 mx29lv400c t/b rev. 1.5, apr. 24, 2006 pin configurations 44 sop(500 mil) pin description ...
Description 4分位[12k × 8 / 256K × 16] CMOS单电V时仅闪存
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO44
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PDSO48
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PBGA48
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 90 ns, PDSO44

File Size 914.60K  /  68 Page

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    Macronix
Part No. MX29LV081B
OCR Text ...tary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. 2 p/n:pm1115 mx29lv081b rev. 1.2, aug. 23, 2005 pin configurations pin description symbol pin name a0~a1...
Description 8M-Bit CMOS Flash Memory

File Size 341.40K  /  51 Page

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    M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28W320CB100N6T M28W320CB100N1T M28W320CT100GB1T M28W320CT85N6T M28W320CB

意法半导
STMicroelectronics
Part No. M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28W320CB100N6T M28W320CB100N1T M28W320CT100GB1T M28W320CT85N6T M28W320CB85GB1T M28W320CB85GB6T M28W320CB100ZB6T M28W320CB70N6T M28W320CB70ZB6T M28W320CB85N6T M28W320CB85ZB1T M28W320CB70ZB1T
OCR Text ...ll blocks are protected against pro- gramming and erase at power up. blocks can be unprotected to make changes in the application and then r...tection against program or erase provides addi- tional data security. memory blocks the device featu...
Description    32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory
Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V
Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V

File Size 282.43K  /  42 Page

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    29LV008BTC

Macronix International
Part No. 29LV008BTC
OCR Text ...high reliability erase and auto pro- gram/erase algorithms. the highest degree of latch-up protection is achieved with mxic's proprietary non-epi process. latch-up pro- tection is proved for stresses up to 100 milliamps on address and data...
Description Search --To MX29LV008BTC

File Size 436.42K  /  52 Page

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