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  jfet-input Datasheet PDF File

For jfet-input Found Datasheets File :: 1919    Search Time::1.438ms    
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    APT5020 APT5020SVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5020 APT5020SVR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5020SVR...
Description 24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 26A 0.200 Ohm

File Size 61.79K  /  4 Page

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    APT5022AVR

ADPOW[Advanced Power Technology]
Part No. APT5022AVR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5022AVR...
Description POWER MOS V 500V 21A 0.220 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.67K  /  4 Page

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    APT5024AVR

ADPOW[Advanced Power Technology]
Part No. APT5024AVR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5024AVR...
Description POWER MOS V 500V 18.5A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.55K  /  4 Page

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    APT5024BVFR

Advanced Power Technology Ltd.
Part No. APT5024BVFR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5024BVF...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 22A 0.240 Ohm

File Size 61.69K  /  4 Page

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    APT5024BVR

ADPOW[Advanced Power Technology]
Part No. APT5024BVR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5024BVR...
Description POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.21K  /  4 Page

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    APT5024SVR

ADPOW[Advanced Power Technology]
Part No. APT5024SVR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switc...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5024SVR...
Description POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 32.19K  /  2 Page

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    APT5026HVR

ADPOW[Advanced Power Technology]
Part No. APT5026HVR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5026HVR...
Description POWER MOS V 500V 18.5A 0.260 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.64K  /  4 Page

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    APT5028BVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5028BVR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5028BVR...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 20A 0.280 Ohm

File Size 61.82K  /  4 Page

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    APT5028SVR

ADPOW[Advanced Power Technology]
Part No. APT5028SVR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5028SVR...
Description POWER MOS V 500V 20A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 64.83K  /  4 Page

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    APT5030AVR

ADPOW[Advanced Power Technology]
Part No. APT5030AVR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5030AVR...
Description POWER MOS V 500V 14.7A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.48K  /  4 Page

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For jfet-input Found Datasheets File :: 1919    Search Time::1.438ms    
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