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  id-1.5a Datasheet PDF File

For id-1.5a Found Datasheets File :: 10737    Search Time::3.297ms    
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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ... = 0.065 typ. (at V GS = -10V, ID = -5A) * Low drive current * High speed switching * 4V gate drive devices. Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute ...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ520 2SJ520TP-FA

Sanyo Semicon Device
Sanyo Electric Co., Ltd.
Part No. 2SJ520 2SJ520TP-FA
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings -20 10 -10 -40 1 20 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakd...
Description P-Channel Silicon MOSFET Load Switching Applications
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 20V的五(巴西)直| 10A条(丁)|52VAR

File Size 43.24K  /  4 Page

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    2SJ522

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SJ522
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25C Conditions Ratings --400 30 --5 --20 1.65 70 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Volt...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 30.28K  /  4 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ...perature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings -60 20 -5 -20 -5 -5 2.1 20 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ...perature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings -60 20 -10 -40 -10 -10 8.5 20 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc =...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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    2SJ539

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SJ539
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -10 -40 -10 Unit V V A A A A mJ W C C Body-drain diode reverse ...1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Charac...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.99K  /  9 Page

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    2SJ547

HITACHI[Hitachi Semiconductor]
Part No. 2SJ547
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -10 -40 -10 Unit V V A A A A mJ W C C Body-drain diode reverse ...1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Charac...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.45K  /  9 Page

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    2SJ560

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SJ560
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings -20 10 -1.5 -6 1.3 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a cera...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole 超高速开关应

File Size 182.72K  /  4 Page

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    2SJ561

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SJ561
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings -30 20 -1.5 -6 1.3 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a cera...
Description    Ultrahigh-Speed Switching Applications
Zener Diode,Single, Two Terminal,33V V(Z),5%,DO-5 RoHS Compliant: Yes 超高速开关应

File Size 158.24K  /  4 Page

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    2SJ569LS

SANYO[Sanyo Semicon Device]
Part No. 2SJ569LS
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions 2.55 2.55 0.6 Ratings --300 30 --5 -20 ...1.5 Ratings min --300 30 --100 10 --2.5 typ max Unit V V A A V Continued on next page. Any and...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 29.35K  /  4 Page

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