high power led - 0 5w pdf Datasheet P6 Description --- IC-ON-LINE


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high power led - 0 5w Datasheet PDF File

For high power led - 0 5w Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				RFMD[RF Micro Devices]
Part No.	TA0012
Description	New 0000'>high 0000'>power, 0000'>high Efficiency HBT GSM 0000'>power Amplifier
File Size	73.22K / 4 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SJ114
Description	0000'>high SPEED 0000'>power SWITCHING, 0000'>high FREQUENCY 0000'>power AMPLIFIER
File Size	114.79K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	FD1000FH0000'>-56
Description	1000 A, 2800 V, SILICON, RECTIFIER DIODE 0000'>high 0000'>power, 0000'>high FREQUENCY, PRESS PACK TYPE 0000'>high 0000'>power/ 0000'>high FREQUENCY/ PRESS PACK TYPE
File Size	40.35K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett0000'>-Packard) Agilent(Hewlett0000'>-Packard)
Part No.	HSMS0000'>-27000000'>-BLK HSMS0000'>-27000000'>-TR2 HSMS0000'>-27020000'>-BLK HSMS0000'>-27020000'>-TR2 HSMS0000'>-270B0000'>-BLK HSMS0000'>-2700 HSMS0000'>-27000000'>-TR1 HSMS0000'>-2702 HSMS0000'>-27020000'>-TR1 HSMS0000'>-270B HSMS0000'>-270B0000'>-TR1 HSMS0000'>-270C HSMS0000'>-270C0000'>-BLK HSMS0000'>-270C0000'>-TR1 HSMS0000'>-270C0000'>-TR2 HSMS0000'>-270B0000'>-TR2
Description	HSMS0000'>-270C · 0000'>high 0000'>power clipping/clamping diode HSMS0000'>-270B · 0000'>high 0000'>power clipping/clamping diode HSMS0000'>-2702 · 0000'>high 0000'>power clipping/clamping diode HSMS0000'>-2700 · 0000'>high 0000'>power clipping/clamping diode 0000'>high Performance Schottky Diode for Transient Suppression
File Size	101.86K / 8 Page	View it Online	Download Datasheet

				Anadigics Inc ANADIGICS, Inc
Part No.	AWT6114
Description	The AWT6114 is a 0000'>high 0000'>power, 0000'>high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. 0000'>power Amplifiers KPCS CDMA 3.4V/28dBm Linear 0000'>power Amplifier Module
File Size	121.68K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	CGD1046HI
Description	1 GHz, 27 dB gain GaAs 0000'>high output 0000'>power doubler 40 MHz 0000'>- 1003 MHz RF/MICROWAVE NARROW BAND 0000'>high 0000'>power AMPLIFIER
File Size	78.51K / 8 Page	View it Online	Download Datasheet

				Vicor, Corp. VICOR[Vicor Corporation]
Part No.	080000'>-1300970000'>-B 080000'>-130097
Description	Compant 0000'>high0000'>-Insulation 0000'>power Relay, Polarized, 10A 外形图式PFC MEGAPAC大功率（2.4KW OUTLINE DRAWING PFC MEGAPAC 0000'>high 0000'>power (2.4KW)
File Size	122.13K / 2 Page	View it Online	Download Datasheet

				CREE 0000'>power
Part No.	W4NRD0X0000'>-0000 W4NRD8C0000'>-U000 W4NXD8C0000'>-0000 W4NXD8C0000'>-L000 W4NXD8D0000'>-0000 W4NXD8C0000'>-S000 W4NXD8D0000'>-S000 W4NXD8G0000'>-0000 W6NRE0X0000'>-0000 W6NRD0X0000'>-0000 W6PXD3O0000'>-0000 W6NXD3L0000'>-0000 W6NXD0K0000'>-0000 W6NXD3K0000'>-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III0000'>-V nitride deposition Diameter: 50.8mm; ultra0000'>-low mircopipe density; silicon carbide substrates. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III0000'>-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III0000'>-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III0000'>-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III0000'>-V nitride deposition Diameter: 76.2mm; LCW type; 6H0000'>-silicon carbide. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III0000'>-V nitride deposition Diameter: 50.8mm; LCW type; 6H0000'>-silicon carbide. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III0000'>-V nitride deposition Diameter: 50.8mm; lsemi0000'>-insulating (prototype); 6H0000'>-silicon carbide. For 0000'>high frequency 0000'>power devices, 0000'>high 0000'>power devices, 0000'>high temperature devices, optoelectronic devices, III0000'>-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				ADPOW[Advanced 0000'>power Technology] Advanced 0000'>power Technology Ltd.
Part No.	APT1001RBLC APT1001RSLC APT1001
Description	0000'>power MOS VI 1000V 11A 1.000 Ohm 0000'>power MOS VI is a new generation of low gate charge, 0000'>high voltage N0000'>-Channel enhancement mode 0000'>power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:250000'>-4 RoHS Compliant: No 0000'>power MOS VI is a new generation of low gate charge/ 0000'>high voltage N0000'>-Channel enhancement mode 0000'>power MOSFETs N0000'>-CHANNEL ENHANCEMENT MODE 0000'>high VOLTAGE 0000'>power MOSFETS
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				UTC ROHM[Rohm]
Part No.	2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N600000'>-TA30000'>-T 4N600000'>-TF30000'>-T 4N60L0000'>-TA30000'>-T
Description	0000'>-3A / 0000'>-12V Bipolar transistor 0000'>-2A / 0000'>-30V Bipolar transistor 0000'>high0000'>-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) 0000'>high0000'>-voltage Amplifier Transistor (120V, 50mA) 0000'>high0000'>-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) 0000'>power transistor (60V, 3A) Medium 0000'>power transistor (60V, 2A) Medium 0000'>power transistor (60V, 0.5A) 0000'>high0000'>-gain Amplifier Transistor (32V , 0.3A) Medium 0000'>power Transistor (32V, 1A) 0000'>power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) 0000'>high0000'>-current Gain Medium 0000'>power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N0000'>-CHANNEL 0000'>power MOSFET
File Size	93.04K / 3 Page	View it Online	Download Datasheet

For high power led - 0 5w Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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