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For benchmark Found Datasheets File :: 1163 Search Time::1.281ms
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				STMicroelectronics N.V. 意法半导 ST Microelectronics
Part No.	STD1NC60 STD1NC60T4 STD1NC60-1
OCR Text	...ALANCHE TESTED NEW HIGH VOLTAGE benchmark GATE CHARGE MINIMIZED IPAK TO-251 3 3 2 1 DPAK TO-252 1 DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly ...
Description	N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET N沟道600V 7ohm - 1.4A的DPAK /像是iPak PowerMesh第二MOSFET的⑩ N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh?II MOSFET N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMeshII MOSFET N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFET N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFET
File Size	279.37K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PF50WD
OCR Text	... Supply applications * Industry benchmark switching losses improve efficiency of all power supply topologies * 50% reduction of Eoff parameter * Low IGBT conduction losses * Latest technology IGBT design offers tighter parameter distributio...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	246.57K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRG4PC40W IRG4PC40
OCR Text	...ection) applications * Industry-benchmark switching losses improve efficiency of all power supply topologies * 50% reduction of Eoff parameter * Low IGBT conduction losses * Latest-generation IGBT design and construction offers tighter para...
Description	600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 2.05V，@和VGE \u003d 15V的，集成电路\u003d 20A条）
File Size	115.15K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGP20B120U-E
OCR Text	...V, IC = 20A, 25C Benefits * benchmark efficiency above 20KHz * Optimized for Welding, UPS, and Induction Heating applications * Rugged with UltraFast performance * Low EMI * Significantly Less Snubber required * Excellent Current sharin...
Description	1200V UltraFast 5-40 kHz Single IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR
File Size	105.27K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGP20B120UD-E IRGP20B120
OCR Text	... E N-channel Benefits * benchmark Efficiency Above 20KHz * Optimized for Welding, UPS, and Induction Heating Applications * Rugged with UltraFast Performance * Low EMI * Significantly Less Snubber Required * Excellent Current Sharin...
Description	1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	136.29K / 12 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB9NC60 STB9NC60-1 B9NC60
OCR Text	...ALANCHE TESTED NEW HIGH VOLTAGE benchmark GATE CHARGE MINIMIZED 3 1 3 12 DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure o...
Description	N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?II MOSFET N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMeshII MOSFET N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh⑩II MOSFET
File Size	460.46K / 10 Page	View it Online	Download Datasheet

				Motorola
Part No.	MPC7457RXNXPND MPC7457RXNXPNS
OCR Text	...while running the Dhrystone 2.1 benchmark and achieving 2.3 Dhrystone MIPs/MHz. 4. Doze mode is not a user-definable state; it is an intermediate state between Full-Power and either Nap or Sleep mode. As a result, power consumption for this...
Description	Part Number Specification for the MPC74x7RXnnnnNx Series
File Size	82.12K / 12 Page	View it Online	Download Datasheet

				Motorola
Part No.	MPC8260AED MPC8260AEC
OCR Text	...gh-performance (6.6-7.65 SPEC95 benchmark at 300 MHz; 1.68 MIPs/MHz without inlining and 1.90 Dhrystones MIPS/MHz with inlining) -- Supports bus snooping for data cache coherency -- Floating-point unit (FPU) Separate power supply for intern...
Description	(HiP4) Family Hardware Specifications
File Size	329.64K / 48 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STP9NC60FP STP9NC60
OCR Text	...ALANCHE TESTED NEW HIGH VOLTAGE benchmark GATE CHARGE MINIMIZED TO-220 3 1 2 3 1 2 DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*...
Description	N-CHANNEL 600V - 0.6 OHM - 9A - TO-220/TO-220FP POWERMESH II MOSFET
File Size	356.84K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STQ1NC60R
OCR Text	...ALANCHE TESTED NEW HIGH VOLTAGE benchmark GATE CHARGE MINIMIZED TO-92 BULK TO-92 (AMMOPACK) DESCRIPTION Using the latest high voltage MESH OVERLAYTMII process, STMicroelectronics has designed an advanced family of power MOSFETs with outs...
Description	N-CHANNEL 600V - 12ohm - 0.3A TO-92 PowerMESH?II Power MOSFET N-CHANNEL 600V 12 OHM 0.3A TO-92 POWERMESH II MOSFET N-CHANNEL 600V - 12ohm - 0.3A TO-92 PowerMESH⑩II Power MOSFET
File Size	425.14K / 9 Page	View it Online	Download Datasheet

For benchmark Found Datasheets File :: 1163 Search Time::1.281ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |